IPB80N06S2L-07

Mfr. #:: IPB80N06S2L-07
制造商:: INF
描述:: Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
生命周期:: 制造商新产品。
数据表:: IPB80N06S2L-07 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 中频

产品分类: FET - 单

系列: 优化MOS

打包: 卷轴

部分别名: IPB80N06S2L07ATMA1 IPB80N06S2L07ATMA3 SP001067890

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 210 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 31 ns

上升时间: 35 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 80 A

Vds-漏-源-击穿电压: 55 V

Rds-On-Drain-Source-Resistance: 6.7 mOhms

晶体管极性: N通道

典型关断延迟时间: 28 ns

典型开启延迟时间: 18 ns

通道模式: 增强

Tags: IPB80N06S2L-0, IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
IPB80N06S2L07ATMA3 DISTI # 24713708	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R	1000	10000:$0.7483 5000:$0.7680 2000:$0.7978 1000:$0.8563
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3CT-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	771In Stock	500:$1.2196 100:$1.5680 10:$1.9510 1:$2.1600
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3DKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB80N06S2L07ATMA1 DISTI # IPB80N06S2L07ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3TR-ND	Infineon Technologies AG	MOSFET N-CH 55V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.9811
IPB80N06S2L07ATMA3 DISTI # C1S322000627143	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.0200
IPB80N06S2L07ATMA3 DISTI # IPB80N06S2L07ATMA3	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L07ATMA3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.8859 2000:$0.8539 4000:$0.8229 6000:$0.7949 10000:$0.7809
IPB80N06S2L07ATMA3 DISTI # SP001067890	Infineon Technologies AG	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067890) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.0439 2000:€0.8699 4000:€0.8029 6000:€0.7449 10000:€0.6959
IPB80N06S2L07ATMA3 DISTI # 34AC1661	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	269	1:$1.8100 10:$1.5400 25:$1.4400 50:$1.3400 100:$1.2400 250:$1.1600 500:$1.0800
IPB80N06S2L07ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	46500	1000:$0.8300 500:$0.8700 100:$0.9100 25:$0.9500 1:$1.0200
IPB80N06S2L07ATMA3 DISTI # 726-IPB80N06S2L07ATM	Infineon Technologies AG	MOSFET N-CHANNEL_55/60V RoHS: Compliant	1631	1:$1.8100 10:$1.5400 100:$1.2400 500:$1.0800 1000:$0.8920 2000:$0.8310 5000:$0.8000 10000:$0.7690
IPB80N06S2L-07 DISTI # 726-IPB80N06S2L07	Infineon Technologies AG	MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS RoHS: Compliant	0
IPB80N06S2L07ATMA3 DISTI # 1107147P	Infineon Technologies AG	MOSFET N-CHANNEL OPTIMOS 55V 80A TO263, RL	1580	50:£0.6620
IPB80N06S2L-07 DISTI # TMOSP11611	Infineon Technologies AG	N-CH 55V 80A 6.7mOHMTO263 RoHS: Compliant	Stock DE - 6000Stock US - 0	1000:$1.3100 2000:$1.2300 3000:$1.1700 4000:$1.0479 6000:$1.0105
IPB80N06S2L07ATMA3 DISTI # 2781073	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263 RoHS: Compliant	269	5:$3.0200 25:$2.6300 100:$2.1500 250:$1.8100 500:$1.5700 1000:$1.4800 5000:$1.4100
IPB80N06S2L07ATMA3 DISTI # 2781073	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 55V, TO-263 RoHS: Compliant	669	5:£1.0200 25:£0.8890 100:£0.7580 250:£0.7490 500:£0.7400

相关产品

图片	型号	描述
	Mfr.#: IPB80N06S3-07 OMO.#: OMO-IPB80N06S3-07	MOSFET N-Ch 55V 80A D2PAK-2
	Mfr.#: IPB80N06S2L11ATMA1 OMO.#: OMO-IPB80N06S2L11ATMA1	MOSFET N-CHANNEL_55/60V
	Mfr.#: IPB80N06S405ATMA2 OMO.#: OMO-IPB80N06S405ATMA2-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 80A TO263-3
	Mfr.#: IPB80N03L OMO.#: OMO-IPB80N03L-1190	全新原装
	Mfr.#: IPB80N03S4L03ATMA1 OMO.#: OMO-IPB80N03S4L03ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 80A TO263-3
	Mfr.#: IPB80N04S3 OMO.#: OMO-IPB80N04S3-1190	全新原装
	Mfr.#: IPB80N06S2L-06 OMO.#: OMO-IPB80N06S2L-06-1190	MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
	Mfr.#: IPB80N06S2L-11 OMO.#: OMO-IPB80N06S2L-11-1190	Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2L-11)
	Mfr.#: IPB80N08S2-07 OMO.#: OMO-IPB80N08S2-07-1190	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
	Mfr.#: IPB80N04S4-03 OMO.#: OMO-IPB80N04S4-03-126	IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2

可用性

库存:: Available
订购:: 1000
输入数量:

IPB80N06S2L-07的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]

参考价格（美元）

数量
单价
小计金额

1: ~~US$1.52~~; ~~US$1.52~~

10: ~~US$1.44~~; ~~US$14.40~~

100: ~~US$1.36~~; ~~US$136.42~~

500: ~~US$1.29~~; ~~US$644.20~~

1000: ~~US$1.21~~; ~~US$1 212.60~~

从...开始

IPB80N06S2L-07

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes