IPB50R199CP

IPB50R199CP
Mfr. #:
IPB50R199CP
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
生命周期:
制造商新产品。
数据表:
IPB50R199CP 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IPB50R199CP 更多信息
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
CoolMOS CP
打包
卷轴
部分别名
IPB50R199CPATMA1 IPB50R199CPXT SP000236092
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
酷摩
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
139 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
10 ns
上升时间
14 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
17 A
Vds-漏-源-击穿电压
550 V
Rds-On-Drain-Source-Resistance
199 mOhms
晶体管极性
N通道
典型关断延迟时间
80 ns
典型开启延迟时间
35 ns
通道模式
增强
Tags
IPB50R19, IPB50R1, IPB50R, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB50R199CPATMA1
DISTI # 30205356
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 6000:$1.3186
  • 2000:$1.3344
  • 1000:$1.4304
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 550V 17A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.7015
IPB50R199CPATMA1
DISTI # C1S322000471076
Infineon Technologies AGMOSFETs
RoHS: Compliant
1000
  • 1000:$1.6800
IPB50R199CP
DISTI # IPB50R199CP
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: IPB50R199CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$1.3950
  • 2000:$1.3377
  • 3000:$1.3196
  • 5000:$1.2682
  • 10000:$1.2519
  • 25000:$1.2206
  • 50000:$1.1908
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB50R199CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 2000
  • 1000:$1.4900
  • 2000:$1.3900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
IPB50R199CPATMA1
DISTI # SP000236092
Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: SP000236092)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€1.9900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.3900
  • 10000:€1.2900
IPB50R199CP
DISTI # 726-IPB50R199CP
Infineon Technologies AGMOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
RoHS: Compliant
1258
  • 1:$2.9300
  • 10:$2.4900
  • 100:$2.1600
  • 250:$2.0500
  • 500:$1.8400
  • 1000:$1.5500
IPB50R199CPInfineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
RoHS: Compliant
13000
  • 1000:$1.3300
  • 500:$1.4000
  • 100:$1.4600
  • 25:$1.5200
  • 1:$1.6400
IPB50R199CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
RoHS: Compliant
130
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
IPB50R199CPATMA1
DISTI # 8275280P
Infineon Technologies AGMOSFET N-CH 17A 550V COOLMOS TO263, RL1255
  • 100:£1.5480
  • 250:£1.4700
  • 500:£1.3240
  • 1000:£1.1220
IPB50R199CPATMA1
DISTI # XSFT00000025424
Infineon Technologies AG 
RoHS: Compliant
4000
  • 1000:$1.9600
图片 型号 描述
IPB50R199CP

Mfr.#: IPB50R199CP

OMO.#: OMO-IPB50R199CP

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Mfr.#: IPB50R140CP

OMO.#: OMO-IPB50R140CP

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Mfr.#: IPB50N12S3L15ATMA1

OMO.#: OMO-IPB50N12S3L15ATMA1

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IPB50R250CPATMA1

Mfr.#: IPB50R250CPATMA1

OMO.#: OMO-IPB50R250CPATMA1

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Mfr.#: IPB50CN10NG

OMO.#: OMO-IPB50CN10NG-1190

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Mfr.#: IPB50CN10NGATMA1

OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 20A TO263-3
IPB50R199CP 5R199P

Mfr.#: IPB50R199CP 5R199P

OMO.#: OMO-IPB50R199CP-5R199P-1190

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IPB50R299CP PB-FREE

Mfr.#: IPB50R299CP PB-FREE

OMO.#: OMO-IPB50R299CP-PB-FREE-1190

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IPB50R350CP

Mfr.#: IPB50R350CP

OMO.#: OMO-IPB50R350CP-1190

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Mfr.#: IPB50R299CP

OMO.#: OMO-IPB50R299CP-124

Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP
可用性
库存:
Available
订购:
2500
输入数量:
IPB50R199CP的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.80
US$1.80
10
US$1.71
US$17.10
100
US$1.62
US$162.03
500
US$1.53
US$765.15
1000
US$1.44
US$1 440.20
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