AS4C4M32S-6BINTR

AS4C4M32S-6BINTR
Mfr. #:
AS4C4M32S-6BINTR
制造商:
Alliance Memory
描述:
DRAM 128M, 3.3V, 4M x 32 SDRAM
生命周期:
制造商新产品。
数据表:
AS4C4M32S-6BINTR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C4M32S-6BINTR 更多信息
产品属性
属性值
制造商:
联盟记忆
产品分类:
动态随机存取存储器
RoHS:
Y
类型:
动态随机存取存储器
数据总线宽度:
32 bit
组织:
4 M x 32
包装/案例:
TFBGA-90
内存大小:
128 Mbit
最大时钟频率:
166 MHz
访问时间:
5.4 ns
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
3 V
电源电流 - 最大值:
160 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
系列:
AS4C4M32S
打包:
卷轴
品牌:
联盟记忆
安装方式:
贴片/贴片
湿气敏感:
是的
工作电源电压:
3.3 V
产品类别:
动态随机存取存储器
出厂包装数量:
2000
子类别:
内存和数据存储
Tags
AS4C4M32S-6, AS4C4M32S, AS4C4M3, AS4C4M, AS4C4, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***p
    G***p
    BY

    Great.

    2019-07-11
    M***n
    M***n
    US

    works perfect

    2019-06-19
    P***n
    P***n
    CA

    Super FAST arrival to Canada, well packed!

    2019-05-01
***ure Electronics
AS4C2M32 Series 128-Mbit (4 M x 32) 3.3V 166MHz Industrial SDRAM - TFBGA-90
***se
128Mb SDR 4M x 32 3.3V 90-ball BGA 166 MHz Industrial Temp Tape and Reel
***et
DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA T/R
***metry Electronics
SDRAM 128MB 166Mhz 3.3V 4M x 32 90ball TFBGA
***or
IC DRAM 128MBIT PARALLEL 90TFBGA
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
型号 制造商 描述 库存 价格
AS4C4M32S-6BINTR
DISTI # AS4C4M32S-6BINTR-ND
Alliance Memory IncIC DRAM 128M PARALLEL 90TFBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.8272
AS4C4M32S-6BINTR
DISTI # AS4C4M32S-6BINTR
Alliance Memory IncDRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA T/R - Tape and Reel (Alt: AS4C4M32S-6BINTR)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$3.4900
  • 4000:$3.4900
  • 8000:$3.1900
  • 12000:$3.0900
  • 20000:$2.9900
AS4C4M32S-6BINTR
DISTI # AS4C4M32S-6BINTR
Alliance Memory IncDRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA T/R (Alt: AS4C4M32S-6BINTR)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 0
  • 2000:€3.9900
  • 4000:€3.7900
  • 8000:€3.6900
  • 12000:€3.3900
  • 20000:€3.1900
AS4C4M32S-6BIN
DISTI # 913-AS4C4M32S-6BIN
Alliance Memory IncDRAM 128M, 3.3V, 4M x 32 SDRAM
RoHS: Compliant
168
  • 1:$5.7100
  • 10:$5.2100
  • 25:$5.1100
  • 50:$5.0700
  • 100:$4.5500
  • 250:$4.5300
  • 500:$4.2500
  • 1000:$4.0700
  • 2000:$3.9400
AS4C4M32S-6BINTR
DISTI # 913-AS4C4M32S-6BINTR
Alliance Memory IncDRAM 128M, 3.3V, 4M x 32 SDRAM
RoHS: Compliant
0
  • 2000:$4.0100
AS4C4M32S-6BINTRAlliance Memory IncSDRAM 128M 3.3V 166Mhz 4M x 32 90ball BGA2000
    图片 型号 描述
    AS4C4M32SA-6TCNTR

    Mfr.#: AS4C4M32SA-6TCNTR

    OMO.#: OMO-AS4C4M32SA-6TCNTR

    DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
    AS4C4M32SA-6TIN

    Mfr.#: AS4C4M32SA-6TIN

    OMO.#: OMO-AS4C4M32SA-6TIN

    DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
    AS4C4M32S-6BIN

    Mfr.#: AS4C4M32S-6BIN

    OMO.#: OMO-AS4C4M32S-6BIN

    DRAM 128M, 3.3V, 4M x 32 SDRAM
    AS4C4M32S-6TCNTR

    Mfr.#: AS4C4M32S-6TCNTR

    OMO.#: OMO-AS4C4M32S-6TCNTR

    DRAM 128M. 3.3V, 166Mhz 4M x 32 SDRAM
    AS4C4M32SA-6TINTR

    Mfr.#: AS4C4M32SA-6TINTR

    OMO.#: OMO-AS4C4M32SA-6TINTR-ALLIANCE-MEMORY

    DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
    AS4C4M32S-6TCNTR

    Mfr.#: AS4C4M32S-6TCNTR

    OMO.#: OMO-AS4C4M32S-6TCNTR-ALLIANCE-MEMORY

    DRAM 128M. 3.3V, 166Mhz 4M x 32 SDRAM
    AS4C4M32S-6BIN

    Mfr.#: AS4C4M32S-6BIN

    OMO.#: OMO-AS4C4M32S-6BIN-ALLIANCE-MEMORY

    DRAM 128M, 3.3V, 4M x 32 SDRAM
    AS4C4M32S-6TCN

    Mfr.#: AS4C4M32S-6TCN

    OMO.#: OMO-AS4C4M32S-6TCN-ALLIANCE-MEMORY

    DRAM 128M. 3.3V, 166Mhz 4M x 32 SDRAM
    AS4C4M32S-7TCN

    Mfr.#: AS4C4M32S-7TCN

    OMO.#: OMO-AS4C4M32S-7TCN-ALLIANCE-MEMORY

    DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
    AS4C4M32D1-5BIN

    Mfr.#: AS4C4M32D1-5BIN

    OMO.#: OMO-AS4C4M32D1-5BIN-ALLIANCE-MEMORY

    IC DRAM 128M PARALLEL 144BGA
    可用性
    库存:
    Available
    订购:
    1500
    输入数量:
    AS4C4M32S-6BINTR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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