KSD882YSTU

KSD882YSTU
Mfr. #:
KSD882YSTU
制造商:
ON Semiconductor / Fairchild
描述:
Bipolar Transistors - BJT NPN Epitaxial Sil
生命周期:
制造商新产品。
数据表:
KSD882YSTU 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
安森美半导体
产品分类:
双极晶体管 - BJT
RoHS:
Y
安装方式:
通孔
包装/案例:
TO-126-3
晶体管极性:
NPN
配置:
单身的
集电极-发射极电压 VCEO 最大值:
30 V
集电极-基极电压 VCBO:
40 V
发射极基极电压 VEBO:
5 V
集电极-发射极饱和电压:
0.3 V
最大直流集电极电流:
3 A
增益带宽积 fT:
90 MHz
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
系列:
KSD882
直流电流增益 hFE 最大值:
400
高度:
11 mm
长度:
8 mm
打包:
管子
宽度:
3.25 mm
品牌:
安森美半导体/飞兆半导体
连续集电极电流:
3 A
DC 集电极/基极增益 hfe 最小值:
60
Pd - 功耗:
10 W
产品类别:
BJT - 双极晶体管
出厂包装数量:
1920
子类别:
晶体管
单位重量:
0.026843 oz
Tags
KSD882YST, KSD882YS, KSD882Y, KSD882, KSD88, KSD8, KSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
KSD882 Series 30 V 3 A 1 W NPN Epitaxial Silicon Transistor - TO-126
***roFlash
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
***Yang
Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ment14 APAC
Transistor, NPN, 30V, 3A, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:90MHz; Power Dissipation
***nell
TRANSISTOR, NPN, 30V, 3A, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 10W; DC Collector Current: 3A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ca Corp
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
***Yang
Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Bulk - Bulk
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***eco
Transistor General Purpose BJT NPN 25 Volt 5A 3-Pin(3+Tab) TO-126
***emi
5.0 A, 25 V NPN Bipolar Power Transistor
***ure Electronics
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***hard Electronics
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W
***ical
Trans GP BJT NPN 450V 1.5A 3-Pin TO-126 Bulk
***et
450V NPN HIGH VOLTAGE POWER TRANSISTOR,T
***et
Bipolar (BJT) Transistor NPN 300V 100mA 100MHz 4W Through Hole TO-126-3
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***or
TRANS NPN 300V 100MA TO126-3
***et
Bipolar (BJT) Transistor NPN - Darlington 80V 1.5A 1W Through Hole TO-126-3
*** Electronic Components
Darlington Transistors NPN Epitaxial Sil Darl
***i-Key
TRANS NPN DARL 80V 1.5A TO-126
型号 制造商 描述 库存 价格
KSD882YSTU
DISTI # V99:2348_06302027
ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube3811
  • 1000:$0.1539
  • 500:$0.1981
  • 100:$0.1986
  • 10:$0.3583
  • 1:$0.4284
KSD882YSTU
DISTI # V36:1790_06302027
ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube0
    KSD882YSTU
    DISTI # KSD882YSTU-ND
    ON SemiconductorTRANS NPN 30V 3A TO-126
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    3385In Stock
    • 5760:$0.1445
    • 3840:$0.1545
    • 1920:$0.1694
    • 100:$0.2790
    • 25:$0.3488
    • 10:$0.3740
    • 1:$0.4400
    KSD882YSTU
    DISTI # 31954828
    ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube3811
    • 1000:$0.1654
    • 500:$0.2130
    • 100:$0.2135
    • 55:$0.3502
    KSD882YSTU
    DISTI # KSD882YSTU
    ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail (Alt: KSD882YSTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
      KSD882YSTU
      DISTI # KSD882YSTU
      ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: KSD882YSTU)
      RoHS: Compliant
      Min Qty: 1786
      Container: Bulk
      Americas - 0
      • 17860:$0.1719
      • 8930:$0.1769
      • 5358:$0.1789
      • 3572:$0.1809
      • 1786:$0.1829
      KSD882YSTU
      DISTI # KSD882YSTU
      ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: KSD882YSTU)
      RoHS: Compliant
      Min Qty: 1920
      Container: Tube
      Americas - 0
      • 19200:$0.1379
      • 11520:$0.1419
      • 7680:$0.1439
      • 3840:$0.1459
      • 1920:$0.1469
      KSD882YSTU
      DISTI # 46AC0936
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:30V,Transition Frequency ft:90MHz,Power Dissipation Pd:10W,DC Collector Current:3A,DC Current Gain hFE:160hFE,Transistor Case RoHS Compliant: Yes960
      • 25000:$0.1460
      • 10000:$0.1480
      • 2500:$0.1590
      • 1000:$0.1780
      • 500:$0.2010
      • 100:$0.2490
      • 10:$0.4370
      • 1:$0.5610
      KSD882YSTU
      DISTI # 512-KSD882YSTU
      ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
      RoHS: Compliant
      3991
      • 1:$0.4100
      • 10:$0.3430
      • 100:$0.2090
      • 1000:$0.1620
      • 2500:$0.1380
      KSD882YS
      DISTI # 512-KSD882YS
      ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
      RoHS: Compliant
      1500
      • 1:$0.5100
      • 10:$0.3840
      • 100:$0.2090
      • 1000:$0.1570
      • 2500:$0.1350
      KSD882YSTUFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
      RoHS: Compliant
      25788
      • 1000:$0.1800
      • 500:$0.1900
      • 100:$0.2000
      • 25:$0.2100
      • 1:$0.2300
      KSD882YSTU
      DISTI # 8067177
      ON SemiconductorTRANSISTORFAIRCHILDKSD882YSTU, TU3780
      • 600:£0.0910
      • 60:£0.0930
      KSD882YSTU
      DISTI # 2825111
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3
      RoHS: Compliant
      1190
      • 5000:$0.1770
      • 1000:$0.1820
      • 500:$0.1980
      • 250:$0.2410
      • 100:$0.2930
      • 25:$0.4300
      • 5:$0.5010
      KSD882YSTU
      DISTI # 2825111
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3990
      • 500:£0.1290
      • 250:£0.1480
      • 100:£0.1660
      • 25:£0.2960
      • 5:£0.3100
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      可用性
      库存:
      Available
      订购:
      1986
      输入数量:
      KSD882YSTU的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.41
      US$0.41
      10
      US$0.34
      US$3.43
      100
      US$0.21
      US$20.90
      1000
      US$0.16
      US$162.00
      2500
      US$0.14
      US$345.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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