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FDG6335N

FDG6335N
Mfr. #:
FDG6335N
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET FDG6335N
生命周期:
制造商新产品。
数据表:
FDG6335N 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SOT-323-6
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
20 V
Id - 连续漏极电流：
700 mA
Rds On - 漏源电阻：
300 mOhms
Vgs - 栅源电压：
12 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
300 mW
配置：
双重的
频道模式：
增强
商品名：
动力战壕
打包：
卷轴
高度：
1.1 mm
长度：
2 mm
产品：
MOSFET 小信号
系列：
FDG6335N
晶体管类型：
2 N-Channel
类型：
MOSFET
宽度：
1.25 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
2.8 S
秋季时间：
7 ns
产品类别：
MOSFET
上升时间：
7 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
9 ns
典型的开启延迟时间：
5 ns
第 # 部分别名：
FDG6335N_NL
单位重量：
0.000988 oz
Tags
FDG6335, FDG633, FDG63, FDG6, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
***ment14 APAC
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
***nell
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***eco
Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70
***ure Electronics
Dual N & P-Channel 20 V 300 mOhm PowerTrench Mosfet SC70-6
***roFlash
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SMD, SC70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:700mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
***emi
PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ
***Yang
Transistor MOSFET Array Dual P-CH 20V 0.6A 6-Pin SC-70 T/R - Tape and Reel
***el Electronic
PMIC - Power Management - Specialized Tape & Reel (TR) 3 (168 Hours) 32-WFQFN Exposed Pad Surface Mount Processor -40°C~85°C 2.7V~5.5V QUAD IC REG BUCK LDO 32TQFN
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
***et Japan
Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
***rchild Semiconductor
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS
***nell
MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Electronics
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
***ure Electronics
N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6)
***nell
MOSFET, N/P-CH, 20V, 0.7A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.325ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
***ure Electronics
Dual N-Channel 20 V 0.385 Ohms Surface Mount Power Mosfet - SOT-363
***et Europe
Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R
***ment14 APAC
MOSFET, DUAL, N, 6-SC-70; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:200mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Continuous Drain Current Id:700mA; Current Id Max:660mA; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):385mohm; Package / Case:SC-70; Power Dissipation Pd:200mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
***(Formerly Allied Electronics)
SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89
***ment14 APAC
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
型号 制造商 描述 库存 价格
FDG6335N
DISTI # FDG6335NTR-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2431
FDG6335N
DISTI # FDG6335NCT-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2763
  • 500:$0.3453
  • 100:$0.4662
  • 10:$0.6040
  • 1:$0.6900
FDG6335N
DISTI # FDG6335NDKR-ND		ON SemiconductorMOSFET 2N-CH 20V 0.7A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2763
  • 500:$0.3453
  • 100:$0.4662
  • 10:$0.6040
  • 1:$0.6900
FDG6335N
DISTI # FDG6335N		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.2559
    • 6000:€0.2089
    • 12000:€0.1919
    • 18000:€0.1769
    • 30000:€0.1639
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1809
    • 6000:$0.1799
    • 12000:$0.1779
    • 18000:$0.1759
    • 30000:$0.1709
    FDG6335N
    DISTI # FDG6335N    		ON SemiconductorTrans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Cut TR (SOS) (Alt: FDG6335N)
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 0
    • 1:$0.2099
    • 30:$0.2069
    • 75:$0.2049
    • 150:$0.2019
    • 375:$0.1959
    • 750:$0.1889
    • 1500:$0.1889
    FDG6335N
    DISTI # 58K1457    		ON SemiconductorDUAL N CHANNEL MOSFET, 20V, 700mA, SC-70,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes0
    • 1:$0.5760
    • 25:$0.4790
    • 50:$0.3950
    • 100:$0.3110
    • 250:$0.2910
    • 500:$0.2700
    • 1000:$0.2500
    FDG6335N
    DISTI # 29X6689    		ON SemiconductorMOSFET, N CHANNEL, 20V, 0.7A, SC-70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes0
    • 1:$0.2120
    • 3000:$0.2100
    • 6000:$0.2070
    • 12000:$0.2050
    FDG6335N
    DISTI # 512-FDG6335N    		ON SemiconductorMOSFET FDG6335N
    RoHS: Compliant    		0
    • 1:$0.5700
    • 10:$0.4730
    • 100:$0.3050
    • 1000:$0.2440
    • 3000:$0.2060
    • 9000:$0.1990
    FDG6335NFairchild Semiconductor Corporation 1836
      FDG6335N
      DISTI # 2453408      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 5:£0.4130
      • 25:£0.3880
      • 100:£0.2360
      • 250:£0.2100
      • 500:£0.1850
      FDG6335N
      DISTI # 2453408RL      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 1:$0.9020
      • 10:$0.7490
      • 100:$0.4830
      FDG6335N
      DISTI # 2453408      		ON SemiconductorMOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6
      RoHS: Compliant      		0
      • 1:$0.9020
      • 10:$0.7490
      • 100:$0.4830
      图片 型号 描述
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      FDG6323

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      FDG6331L(OS 30)

      Mfr.#: FDG6331L(OS 30)

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      FDG6335N

      Mfr.#: FDG6335N

      OMO.#: OMO-FDG6335N-ON-SEMICONDUCTOR

      		 MOSFET 2N-CH 20V 0.7A SOT-363
      FDG6335N-NL

      Mfr.#: FDG6335N-NL

      OMO.#: OMO-FDG6335N-NL-1190

      		 全新原装
      FDG6306P-CUT TAPE

      Mfr.#: FDG6306P-CUT TAPE

      OMO.#: OMO-FDG6306P-CUT-TAPE-1190

      		 全新原装
      FDG6332C--

      Mfr.#: FDG6332C--

      OMO.#: OMO-FDG6332C---1190

      		 全新原装
      可用性
      库存:
      Available
      订购:
      2000
      输入数量:
      FDG6335N的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.29
      US$0.29
      10
      US$0.24
      US$2.43
      100
      US$0.16
      US$15.70
      1000
      US$0.13
      US$126.00
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