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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| HGTG18N120BND DISTI # HGTG18N120BND-ND | ON Semiconductor | IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 884In Stock |
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| HGTG18N120BN DISTI # HGTG18N120BN-ND | ON Semiconductor | IGBT 1200V 54A 390W TO247 RoHS: Compliant Min Qty: 450 Container: Tube | Limited Supply - Call |
|
| HGTG18N120BND DISTI # HGTG18N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 30 Container: Tube | Americas - 1266 |
|
| HGTG18N120BN DISTI # HGTG18N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG18N120BN DISTI # HGTG18N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG18N120BN DISTI # HGTG18N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG18N120BN) RoHS: Compliant Min Qty: 50 Container: Bulk | Americas - 0 |
|
| HGTG18N120BND DISTI # HGTG18N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG18N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG18N120BND DISTI # 58K8901 | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 | |
| HGTG18N120BND DISTI # 97K1398 | ON Semiconductor | IGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes | 382 |
|
| HGTG18N120BN DISTI # 83F5467 | ON Semiconductor | SINGLE IGBT, 1.2KV, 54A,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG18N120BND DISTI # 512-HGTG18N120BND | ON Semiconductor | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde RoHS: Compliant | 665 |
|
| HGTG18N120BN DISTI # 512-HGTG18N120BN | ON Semiconductor | IGBT Transistors 54A 1200V N-Ch RoHS: Compliant | 0 | |
| HGTG18N120BN | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 737 |
|
| HGTG18N120BND | Harris Semiconductor | 38 | ||
| HGTG18N120BND DISTI # 9034285 | ON Semiconductor | IGBT N-CH 1200V 54A NPT TO-247, EA | 93 |
|
| HGTG18N120BND DISTI # 9034285P | ON Semiconductor | IGBT N-CH 1200V 54A NPT TO-247, TU | 732 |
|
| HGTG18N120BN DISTI # HGTG18N120BN | ON Semiconductor | Transistor: IGBT,1.2kV,26A,390W,TO247-3 | 11 |
|
| HGTG18N120BND DISTI # HGTG18N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,26A,390W,TO247-3 | 46 |
|
| HGTG18N120BND DISTI # 1095111 | ON Semiconductor | IGBT, N, TO-247 | 2009 |
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| HGTG18N120BND DISTI # 1095111 | ON Semiconductor | IGBT, N, TO-247 RoHS: Compliant | 391 |
|
| HGTG18N120BND DISTI # XSKDRABS0025239 | ON SEMICONDUCTOR | RoHS: Compliant | 360 in Stock0 on Order |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: 18N10 OMO.#: OMO-18N10-1190 |
全新原装 |
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Mfr.#: 18N10G OMO.#: OMO-18N10G-1190 |
全新原装 |
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Mfr.#: 18N10W OMO.#: OMO-18N10W-1190 |
全新原装 |
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Mfr.#: 18N10W-01 OMO.#: OMO-18N10W-01-1190 |
全新原装 |
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Mfr.#: 18N10W-30 OMO.#: OMO-18N10W-30-1190 |
ATTENUATOR - FIXED COAXIAL |
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Mfr.#: 18N120 OMO.#: OMO-18N120-1190 |
全新原装 |
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Mfr.#: 18N120BN OMO.#: OMO-18N120BN-1190 |
全新原装 |
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Mfr.#: 18N120BNAL OMO.#: OMO-18N120BNAL-1190 |
全新原装 |
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Mfr.#: 18N120BND OMO.#: OMO-18N120BND-1190 |
全新原装 |
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Mfr.#: 18N15 OMO.#: OMO-18N15-1190 |
全新原装 |