IS43R32160D-5BLI

IS43R32160D-5BLI
Mfr. #:
IS43R32160D-5BLI
制造商:
ISSI
描述:
DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
生命周期:
制造商新产品。
数据表:
IS43R32160D-5BLI 数据表
交货:
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支付:
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ECAD Model:
更多信息:
IS43R32160D-5BLI 更多信息
产品属性
属性值
制造商
ISSI,集成硅解决方案公司
产品分类
记忆
系列
-
打包
托盘替代包装
包装盒
144-LFBGA
工作温度
-40°C ~ 85°C (TA)
界面
平行线
电压供应
2.5 V ~ 2.7 V
供应商-设备-包
144-LFBGA (12x12)
内存大小
512M (16M x 32)
内存型
DDR内存
速度
200MHz
格式化内存
内存
Tags
IS43R32160D-5BLI, IS43R321, IS43R3, IS43R, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Quickly and without problems. Thank you.

    2019-04-09
    R***r
    R***r
    BE

    Perfect!

    2019-07-12
DDR SDRAM
ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
型号 制造商 描述 库存 价格
IS43R32160D-5BLI
DISTI # IS43R32160D-5BLI-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 144LFBGA
RoHS: Compliant
Min Qty: 189
Container: Tray
Temporarily Out of Stock
  • 189:$10.3709
IS43R32160D-5BLI-TR
DISTI # IS43R32160D-5BLI-TR-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 144LFBGA
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$9.2605
IS43R32160D-5BLI
DISTI # IS43R32160D-5BLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 16M x 32 2.6V 144-Pin LFBGA - Bulk (Alt: IS43R32160D-5BLI)
RoHS: Compliant
Min Qty: 189
Container: Bulk
Americas - 0
  • 189:$10.1900
  • 378:$9.7900
  • 756:$9.3900
  • 1134:$9.0900
  • 1890:$8.7900
IS43R32160D-5BLI-TR
DISTI # IS43R32160D-5BLI-TR
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 16M x 32 2.6V 144-Pin LFBGA T/R - Tape and Reel (Alt: IS43R32160D-5BLI-TR)
RoHS: Compliant
Min Qty: 1500
Container: Reel
Americas - 0
  • 1500:$10.2900
  • 3000:$9.8900
  • 6000:$9.4900
  • 9000:$9.0900
  • 15000:$8.7900
IS43R32160D-5BLI
DISTI # 870-IS43R32160D-5BLI
Integrated Silicon Solution IncDRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
RoHS: Compliant
0
  • 189:$10.3700
  • 378:$9.9200
  • 567:$9.8500
IS43R32160D-5BLI-TR
DISTI # 870-I43R32160D5BLITR
Integrated Silicon Solution IncDRAM 512Mb, 2.5V, 200MHz 16M x 32 DDR2
RoHS: Compliant
0
  • 1500:$8.8800
图片 型号 描述
IS43R32160D-5BL

Mfr.#: IS43R32160D-5BL

OMO.#: OMO-IS43R32160D-5BL

DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
IS43R32160D-5BLI

Mfr.#: IS43R32160D-5BLI

OMO.#: OMO-IS43R32160D-5BLI

DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
IS43R32160D-5BL-TR

Mfr.#: IS43R32160D-5BL-TR

OMO.#: OMO-IS43R32160D-5BL-TR

DRAM 512Mb, 2.5V, 200MHz 16M x 32 DDR
IS43R32160D-5BLI-TR

Mfr.#: IS43R32160D-5BLI-TR

OMO.#: OMO-IS43R32160D-5BLI-TR

DRAM 512Mb, 2.5V, 200MHz 16M x 32 DDR2
IS43R32160D-5BLI-TR

Mfr.#: IS43R32160D-5BLI-TR

OMO.#: OMO-IS43R32160D-5BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 512Mb, 2.5V, 200MHz 16M x 32 DDR2
IS43R32160D-5BL-TR

Mfr.#: IS43R32160D-5BL-TR

OMO.#: OMO-IS43R32160D-5BL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 512Mb, 2.5V, 200MHz 16M x 32 DDR
IS43R32160D-5BLI

Mfr.#: IS43R32160D-5BLI

OMO.#: OMO-IS43R32160D-5BLI-INTEGRATED-SILICON-SOLUTION

DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
IS43R32160D-5BL

Mfr.#: IS43R32160D-5BL

OMO.#: OMO-IS43R32160D-5BL-INTEGRATED-SILICON-SOLUTION

DRAM 512Mb, 2.5V, 200MHz 16Mx32 DDR SDRAM
IS43R32160D-5BLI/BL

Mfr.#: IS43R32160D-5BLI/BL

OMO.#: OMO-IS43R32160D-5BLI-BL-1190

全新原装
可用性
库存:
Available
订购:
5500
输入数量:
IS43R32160D-5BLI的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$13.18
US$13.18
10
US$12.53
US$125.26
100
US$11.87
US$1 186.65
500
US$11.21
US$5 603.65
1000
US$10.55
US$10 548.00
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