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SGS10N60RUFDTU

SGS10N60RUFDTU
Mfr. #:
SGS10N60RUFDTU
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V/10A/w/FRD
生命周期:
制造商新产品。
数据表:
SGS10N60RUFDTU 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
E
技术：
硅
包装/案例：
TO-220-3 FP
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.2 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
16 A
Pd - 功耗：
55 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
SGS10N60RUFD
打包：
管子
连续集电极电流 Ic 最大值：
16 A
高度：
9.19 mm
长度：
10.16 mm
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
16 A
栅极-发射极漏电流：
+/- 100 nA
产品类别：
IGBT晶体管
出厂包装数量：
1000
子类别：
IGBT
第 # 部分别名：
SGS10N60RUFDTU_NL
单位重量：
0.080072 oz
Tags
SGS10N60RUFD, SGS10N60RUF, SGS10N60R, SGS10N, SGS10, SGS1, SGS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
***emi
IGBT, 600V, 10A, Short Circuit Rated
***ure Electronics
IGBT 600V 16A 55W Through Hole TO-220F
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi SGS10N60RUFDTU
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 600V/10A/w/FRD
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***et
IGBT 600V 14A 45W Through Hole TO-220F
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers IGBT 600V 7A Low Sat CO-PAK
***i-Key
IGBT 600V 14A 45W TO220F
***el Electronic
IC OPAMP GP 2 CIRCUIT 8SOP
***i-Key Marketplace
N-CHANNEL IGBT
***p One Stop Global
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3+Tab) TO-220 Full-Pak Tube
***ure Electronics
N-Channel 600 V 17 A Flange Mount Ultrafast CoPack IGBT - TO-220FP
***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 45 W
***ment14 APAC
IGBT, 600V, 17A, TO-220FP; Transistor Type:IGBT; DC Collector Current:17A; Collector Emitter Voltage Vces:1.95V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:17A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***(Formerly Allied Electronics)
IGBT 19A 600V Ultrafast Diode TO-220FP
***ineon SCT
The 5th generation of ultrafast 600 V, 15 A IGBT in a TO-220 Full-Pak package co-packed with a low Vf diode has been optimized for lower conduction losses, FULLPAK220-3COPAK, RoHS
***ment14 APAC
IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
600V LOW-VCEON COPACK IGBT IN A TO-220 FULLPAK PACKAGE | Infineon IRGIB7B60KDPBF
***ure Electronics
IRGIB7B60 Series 600 V 8 A N-Channel UltraFast IGBT - TO-220AB
***Yang
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ment14 APAC
IGBT, 600V, 12A, TO-220FP; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:12A; Fall Time Max:42ns; Fall Time tf:42ns; Package / Case:TO-220FP; Power Dissipation Max:39W; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulsed Current Icm:24A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
型号 制造商 描述 库存 价格
SGS10N60RUFDTU
DISTI # V36:1790_06359716		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Rail60
  • 1000:$1.1303
  • 500:$1.3832
  • 100:$1.5490
  • 10:$1.9719
  • 1:$2.5444
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU-ND		ON SemiconductorIGBT 600V 16A 55W TO220F
RoHS: Compliant
Min Qty: 1
Container: Tube		1030In Stock
  • 5000:$1.1144
  • 3000:$1.1283
  • 1000:$1.2119
  • 100:$1.7803
  • 25:$2.0896
  • 10:$2.2150
  • 1:$2.4700
SGS10N60RUFDTU
DISTI # 30149013		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Rail60
  • 1000:$1.2151
  • 500:$1.4869
  • 100:$1.6652
  • 10:$2.1198
  • 8:$2.4866
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8589
  • 500:€0.8909
  • 100:€0.9259
  • 50:€0.9629
  • 25:€1.0029
  • 10:€1.0939
  • 1:€1.2029
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 224
Container: Bulk		Americas - 0
  • 2240:$1.2900
  • 224:$1.3900
  • 448:$1.3900
  • 672:$1.3900
  • 1120:$1.3900
SGS10N60RUFDTU
DISTI # SGS10N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: SGS10N60RUFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.8799
  • 5000:$0.9019
  • 3000:$0.9139
  • 2000:$0.9249
  • 1000:$0.9309
SGS10N60RUFDTU
DISTI # 83C0939		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,16A I(C),TO-220AB(FP) ROHS COMPLIANT: YES0
  • 10000:$1.0900
  • 2500:$1.1400
  • 1000:$1.2400
  • 500:$1.4800
  • 100:$1.6800
  • 10:$2.0700
  • 1:$2.5400
SGS10N60RUFDTU
DISTI # 512-SGS10N60RUFDTU		ON SemiconductorIGBT Transistors 600V/10A/w/FRD
RoHS: Compliant		700
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
SGS10N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		96023
  • 1000:$1.4700
  • 500:$1.5500
  • 100:$1.6200
  • 25:$1.6800
  • 1:$1.8100
SGS10N60RUFDTU
DISTI # XSKDRABV0038967		ON SEMICONDUCTORSIDACtor Protection Thyristor SYM 3Chp 420V 50A
RoHS: Compliant		800 in Stock0 on Order
  • 800:$1.3000
  • 360:$1.3900
图片 型号 描述
SGS10N60RUFDTU

Mfr.#: SGS10N60RUFDTU

OMO.#: OMO-SGS10N60RUFDTU

 IGBT Transistors 600V/10A/w/FRD
SGS10N60RUFTU

Mfr.#: SGS10N60RUFTU

OMO.#: OMO-SGS10N60RUFTU

 Motor / Motion / Ignition Controllers & Drivers 600V/10A
SGS10N60

Mfr.#: SGS10N60

OMO.#: OMO-SGS10N60-1190

 全新原装
SGS10N60RU

Mfr.#: SGS10N60RU

OMO.#: OMO-SGS10N60RU-1190

 全新原装
SGS10N60RUF

Mfr.#: SGS10N60RUF

OMO.#: OMO-SGS10N60RUF-1190

 全新原装
SGS10N60RUFD

Mfr.#: SGS10N60RUFD

OMO.#: OMO-SGS10N60RUFD-1190

 全新原装
SGS10N60RUFDTU(SG)

Mfr.#: SGS10N60RUFDTU(SG)

OMO.#: OMO-SGS10N60RUFDTU-SG--1190

 全新原装
SGS10N60RUFTU

Mfr.#: SGS10N60RUFTU

OMO.#: OMO-SGS10N60RUFTU-ON-SEMICONDUCTOR

 IGBT 600V 16A 55W TO220F
SGS10N60RUFDTU

Mfr.#: SGS10N60RUFDTU

OMO.#: OMO-SGS10N60RUFDTU-ON-SEMICONDUCTOR

 IGBT Transistors 600V/10A/w/FRD
可用性
库存:
Available
订购:
1984
输入数量:
SGS10N60RUFDTU的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$2.34
US$2.34
10
US$1.99
US$19.90
100
US$1.59
US$159.00
500
US$1.39
US$695.00
1000
US$1.15
US$1 150.00
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