MSC015SMA070B

Mfr. #:: MSC015SMA070B
制造商:: Microchip / Microsemi
描述:: MOSFET UNRLS, FG, SIC MOSFET, TO-247
生命周期:: 制造商新产品。
数据表:: MSC015SMA070B 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MSC015SMA070B 更多信息

产品属性
属性值

制造商：: 微芯片

产品分类：: MOSFET

RoHS：: Y

技术：: 碳化硅

安装方式：: 通孔

包装/案例：: TO-247-3

晶体管极性：: N通道

Vds - 漏源击穿电压：: 700 V

Rds On - 漏源电阻：: 19 mOhms

最低工作温度：: - 55 C

最高工作温度：: + 175 C

打包：: 管子

品牌：: 微芯片/Microsemi

产品类别：: MOSFET

出厂包装数量：: 1

子类别：: MOSFET

Tags: MSC01, MSC0, MSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MSC015SMA070B 更多信息

SiC Schottky Barrier Diodes: Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Next Generation SiC MOSFETs: Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.

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