BUZ906P

BUZ906P
Mfr. #:
BUZ906P
制造商:
TT Electronics Power and Hybrid / Semelab Limited
描述:
MOSFET P-CHANNEL 200V 8A TO-247, TU
生命周期:
制造商新产品。
数据表:
BUZ906P 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
Tags
BUZ90, BUZ9, BUZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
MOSFET, P, TO-247
***Components
Tranzystor BUZ906P
***ark
P Channel Mosfet, -200V, 8A, To-247; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(On):1.5Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:-1.5V; Msl:- Rohs Compliant: Yes
***nell
MOSFET, P, TO-247; Polarità Transistor:Canale P; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:-200V; Resistenza di Attivazione Rds(on):1.5ohm; Tensione Vgs di Misura Rds(on):-; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019); Capacità Ciss Tipica:734pF; Configurazione Pin:G(1), S(2), D(3); Corrente Id Max:8A; Diodo Flywheel:Id(peak) = 8 A; Livello Temperatura a Piena Potenza:25°C; Modello Case Alternativo:SOT-249; No. di Transistor:1; Resistenza Termica A da Giunzione a Case:1°C/W; Temperatura di Corrente:25°C; Temperatura di Giunzione Tj Max:150°C; Tempo di Accensione:120ns; Tempo di Spegnimento:60ns; Tensione Vds Tipica:-200V; Tensione Vgs Max:14V; Tipo di Terminazione:Foro Passante
型号 制造商 描述 库存 价格
BUZ906P
DISTI # 841132P
TT Electronics Power and Hybrid / Semelab LimitedMOSFET P-CHANNEL 200V 8A TO-247, TU1
  • 500:£4.1100
  • 250:£4.6900
  • 100:£4.9900
  • 25:£5.2800
BUZ906P
DISTI # 1208685
TT Electronics Power and Hybrid / Semelab LimitedMOSFET, P, TO-247
RoHS: Compliant
0
  • 2500:$9.3100
  • 1000:$9.7700
  • 250:$10.1100
  • 500:$10.1100
  • 100:$10.6600
  • 25:$11.0600
  • 10:$12.2200
  • 1:$13.0300
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Mfr.#: BUZ32 E3045

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Mfr.#: BUZ61

OMO.#: OMO-BUZ61-1190

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Mfr.#: BUZ71A-R4941

OMO.#: OMO-BUZ71A-R4941-1190

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Mfr.#: BUZ83A(BUZ83)

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BUZ900P

Mfr.#: BUZ900P

OMO.#: OMO-BUZ900P-1190

N CHANNEL MOSFET, 160V, 8A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:160V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-, Thresh
可用性
库存:
Available
订购:
5000
输入数量:
BUZ906P的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
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