GS816118DGT-200IV

GS816118DGT-200IV
Mfr. #:
GS816118DGT-200IV
制造商:
GSI Technology
描述:
SRAM 1.8/2.5V 1M x 18 18M
生命周期:
制造商新产品。
数据表:
GS816118DGT-200IV 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS816118DGT-200IV 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
18 Mbit
组织:
1 M x 18
访问时间:
6.5 ns
最大时钟频率:
200 MHz
接口类型:
平行线
电源电压 - 最大值:
2.7 V
电源电压 - 最小值:
1.7 V
电源电流 - 最大值:
210 mA, 215 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
TQFP-100
打包:
托盘
内存类型:
特别提款权
系列:
GS816118DGT
类型:
同步突发
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
18
子类别:
内存和数据存储
商品名:
同步突发
Tags
GS816118DGT-20, GS816118DGT-2, GS816118DGT, GS816118DG, GS816118D, GS81611, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 6.5ns/3ns 100-Pin TQFP
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 7.5ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 117MHz 7.5ns 1.6mm 250mA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,flow-Through,sync,1Mb X 18,7.5Ns,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LF102418A-7.5TQLI
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP Tray
***ure Electronics
Synchronous SRAM ZBT 18 Mb( 1M x 18), 166 Mhz TQFP-100
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key Marketplace
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
STANDARD SRAM, 1MX36, 6.5NS PDSO
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 3.1ns 100-Pin TQFP
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,"no-Wait"/Pipeline,sync,1Mb X 18,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP102418-200TQLI
***p One Stop Global
SRAM Chip Sync Dual 3.3V 18M-bit 1M x 18 3.1ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 200MHz 3.1ns 1.6mm 475mA
*** Stop Electro
Cache SRAM, 1MX18, CMOS, PQFP100
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,pipeline,sync,1Mb X 18,200Mhz,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LPS102418A-200TQLI
***ure Electronics
AS8C161831 Series 18 Mb (1 M x 18) 2.5 V 3.2 ns Synchronous RAM - TQFP100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP
***se
18Mb SYNC SRAM 1M x 18 ZBT(Pipelined) 2.5V 166MHz 100TQFP
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 4.2ns 100-Pin TQFP Tray
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***(Formerly Allied Electronics)
18M (1MX18) 2.5V CORE ZBT SRAM
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
图片 型号 描述
GS816118DGT-200I

Mfr.#: GS816118DGT-200I

OMO.#: OMO-GS816118DGT-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-250

Mfr.#: GS816118DGT-250

OMO.#: OMO-GS816118DGT-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGD-250

Mfr.#: GS816118DGD-250

OMO.#: OMO-GS816118DGD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-250I

Mfr.#: GS816118DGT-250I

OMO.#: OMO-GS816118DGT-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-200V

Mfr.#: GS816118DGT-200V

OMO.#: OMO-GS816118DGT-200V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-250V

Mfr.#: GS816118DGT-250V

OMO.#: OMO-GS816118DGT-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-200IV

Mfr.#: GS816118DGD-200IV

OMO.#: OMO-GS816118DGD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DD-200IV

Mfr.#: GS816118DD-200IV

OMO.#: OMO-GS816118DD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DD-333I

Mfr.#: GS816118DD-333I

OMO.#: OMO-GS816118DD-333I

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-400I

Mfr.#: GS816118DGT-400I

OMO.#: OMO-GS816118DGT-400I

SRAM 2.5 or 3.3V 1M x 18 18M
可用性
库存:
Available
订购:
5000
输入数量:
GS816118DGT-200IV的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$25.77
US$25.77
25
US$23.93
US$598.25
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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