We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
型号 | 制造商 | 描述 | 库存 | 价格 |
---|---|---|---|---|
HFA3127BZ DISTI # V36:1790_18790425 | Intersil Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N | 0 | |
HFA3127BZ96 DISTI # V36:1790_18790426 | Intersil Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N T/R | 0 | |
HFA3127BZ DISTI # HFA3127BZ-ND | Renesas Electronics Corporation | RF TRANS 5 NPN 12V 8GHZ 16SOIC RoHS: Compliant Min Qty: 1 Container: Tube | 1495In Stock |
|
HFA3127BZ96 DISTI # HFA3127BZ96-ND | Renesas Electronics Corporation | RF TRANS 5 NPN 12V 8GHZ 16SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
HFA3127BZ DISTI # HFA3127BZ | Renesas Electronics Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N (Alt: HFA3127BZ) RoHS: Compliant Min Qty: 48 | Europe - 0 |
|
HFA3127BZ DISTI # HFA3127BZ | Renesas Electronics Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N - Rail/Tube (Alt: HFA3127BZ) RoHS: Compliant Min Qty: 960 Container: Tube | Americas - 0 |
|
HFA3127BZ96 DISTI # HFA3127BZ96 | Renesas Electronics Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N T/R (Alt: HFA3127BZ96) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
HFA3127BZ96 DISTI # HFA3127BZ96 | Renesas Electronics Corporation | Trans GP BJT NPN 8V 0.065A 16-Pin SOIC N T/R - Tape and Reel (Alt: HFA3127BZ96) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
HFA3127BZ DISTI # 69AC5875 | Renesas Electronics Corporation | TRANSISTOR ARRAY,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:8V,Power Dissipation Pd:150mW,DC Collector Current:37mA,DC Current Gain hFE:130hFE,Transistor Case Style:SOIC,No. of Pins:16Pins,Operating RoHS Compliant: Yes | 6 |
|
HFA3127BZ DISTI # 968-HFA3127BZ | Renesas Electronics Corporation | RF Bipolar Transistors W/ANNEAL TXARRAY 5X NPN 16N MIL RoHS: Compliant | 174 |
|
HFA3127BZ96 DISTI # 968-HFA3127BZ96 | Renesas Electronics Corporation | RF Bipolar Transistors W/ANNEAL TXARRAY 5X NPN 16N MILEL RoHS: Compliant | 0 |
|
HFA3127BZ DISTI # 496745 | Intersil Corporation | 5 NPN TRANSISTOR ARRAYHFA3127BZ, EA | 11 |
|
HFA3127BZ DISTI # 496745P | Intersil Corporation | 5 NPN TRANSISTOR ARRAYHFA3127BZ, TU | 653 |
|
HFA3127BZ | Intersil Corporation | 20 | ||
HFA3127BZ DISTI # 1611372 | Renesas Electronics Corporation | TRANSISTOR ARRAY RoHS: Compliant | 16 |
|
HFA3127BZ DISTI # 1611372 | Renesas Electronics Corporation | TRANSISTOR ARRAY | 6 |
|
HFA3127BZ | Intersil Corporation | RoHS: Compliant | Europe - 144 |
图片 | 型号 | 描述 |
---|---|---|
Mfr.#: TLV3544QPWRQ1 OMO.#: OMO-TLV3544QPWRQ1 |
Operational Amplifiers - Op Amps HI SPD SS CMOS OP AMP | |
Mfr.#: SIHFL9110TR-GE3 OMO.#: OMO-SIHFL9110TR-GE3 |
MOSFET 100V Vds 20V Vgs SOT-223 | |
Mfr.#: SIHFL110TR-GE3 OMO.#: OMO-SIHFL110TR-GE3 |
MOSFET 100V Vds 20V Vgs SOT-223 | |
Mfr.#: MCP1812AT-033/TT OMO.#: OMO-MCP1812AT-033-TT |
LDO Voltage Regulators Ultra Low Iq LDO | |
Mfr.#: CRCW08051K00FKEAC OMO.#: OMO-CRCW08051K00FKEAC |
Thick Film Resistors - SMD 1/8Watt 1Kohms 1% Commercial Use | |
Mfr.#: CRCW08052K00FKEAC OMO.#: OMO-CRCW08052K00FKEAC |
Thick Film Resistors - SMD 1/8Watt 2Kohms 1% Commercial Use | |
Mfr.#: SIHFL110TR-GE3 OMO.#: OMO-SIHFL110TR-GE3-1190 |
HANNEL 100V | |
Mfr.#: SIHFL9110TR-GE3 OMO.#: OMO-SIHFL9110TR-GE3-1190 |
Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R | |
Mfr.#: MCP1812AT-033/TT |
Ultra Low Iq LDO | |
Mfr.#: CRCW08051K00FKEAC |
D12/CRCW0805-C 100 1K0 1% ET1 |