SIE802DF-T1-E3

Mfr. #:: SIE802DF-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 30V 60A 10-POLARPAK
生命周期:: 制造商新产品。
数据表:: SIE802DF-T1-E3 数据表
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更多信息:: SIE802DF-T1-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 单

打包: 卷轴

部分别名: SIE802DF-E3

安装方式: 贴片/贴片

包装盒: PolarPAK-10

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 5.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 20 ns 10 ns

上升时间: 195 ns 20 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 42.7 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 1.9 mOhms

晶体管极性: N通道

典型关断延迟时间: 45 ns 65 ns

典型开启延迟时间: 45 ns 25 ns

通道模式: 增强

Tags: SIE80, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE802DF-T1-E3 描述

***ure Electronics: Single N-Channel 30 V 0.0019 Ohms Surface Mount Power Mosfet - PolarPAK

***ical: Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R

***p One Stop Global: Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R

***C: Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK

***ponent Sense: TRANS N-CH 30V-TRANSISTOR FET N-CH

***i-Key: MOSFET N-CH 30V 60A 10-POLARPAK

***: N-CHANNEL 30-V (D-S) MOSFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0026ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.2V ;RoHS Compliant: Yes

***nell: MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:202A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Base Number:802; Current, Idm Pulse:100A; N-channel Gate Charge:50nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0019ohm; Resistance, Rds on @ Vgs = 4.5V:0.0026ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3.7V; Voltage, Vgs th Min:1.5V

SIE802DF-T1-E3 更多信息

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

型号	制造商	描述	库存	价格
SIE802DF-T1-E3 DISTI # V72:2272_09215702	Vishay Intertechnologies	Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R RoHS: Compliant	0
SIE802DF-T1-E3 DISTI # SIE802DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8574
SIE802DF-T1-E3 DISTI # SIE802DF-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE802DF-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$1.6900 30000:$1.6900 6000:$1.7900 12000:$1.7900 3000:$1.8900
SIE802DF-T1-E3 DISTI # 781-SIE802DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.9mohm @ 10V RoHS: Compliant	3000	1:$3.7200 10:$3.0800 100:$2.5400 250:$2.4600 500:$2.2000 1000:$1.8600 3000:$1.7600
SIE802DF-T1-E3	Vishay Intertechnologies		1106
SIE802DF-T1-E3	Vishay Semiconductors	42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET	100	11:$1.8000 4:$2.4000 1:$3.6000
SIE802DF-T1-E3	Vishay Siliconix	42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET	19	11:$1.8000 4:$2.4000 1:$3.6000
SIE802DF-T1-E3	Vishay Intertechnologies	MOSFET 30V 60A 125W 1.9mohm @ 10V	Americas -

图片	型号	描述
	Mfr.#: SIE802DF-T1-E3 OMO.#: OMO-SIE802DF-T1-E3	MOSFET 30V 60A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-GE3 OMO.#: OMO-SIE802DF-T1-GE3	MOSFET 30V 202A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-GE3 OMO.#: OMO-SIE802DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 202A 125W 1.9mohm @ 10V
	Mfr.#: SIE802DF-T1-E3 OMO.#: OMO-SIE802DF-T1-E3-VISHAY	MOSFET N-CH 30V 60A 10-POLARPAK

SIE802DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes