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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI5406DC-T1-E3 DISTI # SI5406DC-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 12V 6.9A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5406DC-T1-E3 DISTI # SI5406DC-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 12V 6.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5406DC-T1-E3 DISTI # SI5406DC-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 12V 6.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5406DC-T1-GE3 DISTI # SI5406DC-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 12V 6.9A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5406DC-T1-GE3 DISTI # 781-SI5406DC-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 RoHS: Compliant | 0 | |
| SI5406DC-T1-E3 DISTI # 781-SI5406DC-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 RoHS: Compliant | 0 | |
| SI5406DC-T1 DISTI # 781-SI5406DC | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 RoHS: Not compliant | 0 | |
| SI5406DC-E3 | Vishay Intertechnologies | 779 | ||
| SI5406DC-T1-GE3 DISTI # 1871367 | Vishay Intertechnologies | N CHANNEL MOSFET, 12V, 9.5A RoHS: Compliant | 0 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SI5485DU-T1-E3 OMO.#: OMO-SI5485DU-T1-E3 |
MOSFET 20V 12A 31W 25mohm @ 4.5V |
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Mfr.#: SI5418DU-T1-GE3 OMO.#: OMO-SI5418DU-T1-GE3-VISHAY |
MOSFET N-CH 30V 12A PPAK CHIPFET |
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Mfr.#: SI54-1R0 OMO.#: OMO-SI54-1R0-1190 |
全新原装 |
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Mfr.#: SI54-220 OMO.#: OMO-SI54-220-1190 |
全新原装 |
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Mfr.#: SI54-220PF OMO.#: OMO-SI54-220PF-1190 |
全新原装 |
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Mfr.#: SI5418DU-T1-E3 OMO.#: OMO-SI5418DU-T1-E3-1190 |
全新原装 |
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Mfr.#: SI5449DC-T1 OMO.#: OMO-SI5449DC-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI5403DC-T1-GE3 |
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Mfr.#: SI5465ECD-T1-E3 OMO.#: OMO-SI5465ECD-T1-E3-1190 |
全新原装 |
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Mfr.#: SI5475DDC-T1-E3 OMO.#: OMO-SI5475DDC-T1-E3-1190 |
全新原装 |
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Mfr.#: SI5499DCT1E3 OMO.#: OMO-SI5499DCT1E3-1190 |
Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |