IRG4IBC20WPBF

IRG4IBC20WPBF
Mfr. #:
IRG4IBC20WPBF
制造商:
Infineon Technologies
描述:
IGBT Transistors 600V Warp 60-150kHz
生命周期:
制造商新产品。
数据表:
IRG4IBC20WPBF 数据表
交货:
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支付:
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HTML Datasheet:
IRG4IBC20WPBF DatasheetIRG4IBC20WPBF Datasheet (P4-P6)IRG4IBC20WPBF Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-220FP-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
2.16 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
12 A
Pd - 功耗:
34 W
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
打包:
管子
连续集电极电流 Ic 最大值:
12 A
高度:
9.1 mm
长度:
10.6 mm
宽度:
4.8 mm
品牌:
英飞凌科技
栅极-发射极漏电流:
100 nA
产品类别:
IGBT晶体管
出厂包装数量:
2000
子类别:
IGBT
第 # 部分别名:
SP001537234
单位重量:
0.081130 oz
Tags
IRG4IBC20W, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak
***ied Electronics & Automation
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.8A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 11.8A, TO-220FP; Transistor Type:IGBT; DC Collector Current:11.8A; Collector Emitter Voltage Vces:2.16V; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:11.8A; Current Temperature:25°C; Device Marking:IRG4IBC20WPbF; Fall Time Typ:64ns; Fall Time tf:64ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:34W; Power Dissipation Pd:34W; Power Dissipation Pd:34W; Pulsed Current Icm:52A; Rise Time:14ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
型号 制造商 描述 库存 价格
IRG4IBC20WPBF
DISTI # IRG4IBC20WPBF-ND
Infineon Technologies AGIGBT 600V 12A 34W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube
Limited Supply - Call
    IRG4IBC20WPBF
    DISTI # IRG4IBC20WPBF
    Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Bulk (Alt: IRG4IBC20WPBF)
    Min Qty: 329
    Container: Bulk
    Americas - 0
    • 3290:$0.9659
    • 1645:$0.9849
    • 987:$1.0239
    • 658:$1.0639
    • 329:$1.1089
    IRG4IBC20WPBF
    DISTI # 70018444
    Infineon Technologies AG600V Warp 60-150 kHz Discrete IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant
    0
    • 350:$2.2300
    IRG4IBC20WPBF
    DISTI # 942-IRG4IBC20WPBF
    Infineon Technologies AGIGBT Transistors 600V Warp 60-150kHz
    RoHS: Compliant
    0
      IRG4IBC20WPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      447
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBFInternational RectifierInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant
      10
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBF
      DISTI # 8650454
      Infineon Technologies AGIGBT, 600V, 11.8A, TO-220FP
      RoHS: Compliant
      0
      • 1000:$1.7100
      • 500:$2.0500
      • 100:$2.3500
      • 10:$2.9200
      • 1:$3.4500
      图片 型号 描述
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      OMO.#: OMO-IRG4IBC30KDPBF

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      Mfr.#: IRG4IBC20FDPBF

      OMO.#: OMO-IRG4IBC20FDPBF

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      IRG4IBC20WPBF

      Mfr.#: IRG4IBC20WPBF

      OMO.#: OMO-IRG4IBC20WPBF

      IGBT Transistors 600V Warp 60-150kHz
      IRG4IBC20FDPBF

      Mfr.#: IRG4IBC20FDPBF

      OMO.#: OMO-IRG4IBC20FDPBF-INFINEON-TECHNOLOGIES

      IGBT 600V 14.3A 34W TO220FP
      IRG4IBC20KDPBF

      Mfr.#: IRG4IBC20KDPBF

      OMO.#: OMO-IRG4IBC20KDPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V UltraFast 8-25kHz
      IRG4IBC30WPBF

      Mfr.#: IRG4IBC30WPBF

      OMO.#: OMO-IRG4IBC30WPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V Warp 60-150kHz
      IRG4IBC10UDPBF

      Mfr.#: IRG4IBC10UDPBF

      OMO.#: OMO-IRG4IBC10UDPBF-INFINEON-TECHNOLOGIES

      IGBT Transistors 600V UltraFast 8-60kHz
      IRG4IBC10UD

      Mfr.#: IRG4IBC10UD

      OMO.#: OMO-IRG4IBC10UD-INFINEON-TECHNOLOGIES

      IGBT 600V 6.8A 25W TO220FP
      IRG4IBC30KDPBF.

      Mfr.#: IRG4IBC30KDPBF.

      OMO.#: OMO-IRG4IBC30KDPBF--1190

      DC Collector Current:17A, Collector Emitter Saturation Voltage Vce(on):2.88V, Power Dissipation Pd:45W, Collector Emitter Voltage V(br)ceo:600V, No. of Pins:3Pins, Operating Temperature Max:150°C
      IRG4IBC30WPBF.

      Mfr.#: IRG4IBC30WPBF.

      OMO.#: OMO-IRG4IBC30WPBF--1190

      全新原装
      可用性
      库存:
      Available
      订购:
      1000
      输入数量:
      IRG4IBC20WPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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