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NDS8858H

NDS8858H
Mfr. #:
NDS8858H
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET CMOSFET Half Bridge
生命周期:
制造商新产品。
数据表:
NDS8858H 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NDS8858H DatasheetNDS8858H Datasheet (P4-P6)NDS8858H Datasheet (P7-P9)NDS8858H Datasheet (P10-P12)
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
2 Channel
晶体管极性：
N沟道，P沟道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
6.3 A
Rds On - 漏源电阻：
35 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
双重的
频道模式：
增强
打包：
卷轴
高度：
1.75 mm
长度：
4.9 mm
系列：
NDS8858H
晶体管类型：
1 N-Channel, 1 P-Channel
类型：
MOSFET
宽度：
3.9 mm
品牌：
安森美半导体/飞兆半导体
秋季时间：
10 ns, 19 ns
产品类别：
MOSFET
上升时间：
13 ns, 20 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
29 ns, 40 ns
典型的开启延迟时间：
12 ns, 9 ns
第 # 部分别名：
NDS8858H_NL
单位重量：
0.008127 oz
Tags
NDS8858H, NDS8858, NDS885, NDS88, NDS8, NDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
***ark
Dual N/p Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***rchild Semiconductor
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
***Yang
Transistor MOSFET Array Dual N-Channel 30V 5.3A 8-Pin SOIC N T/R - Bulk
***-Wing Technology
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 5.3A 900mW 10ns
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
*** Source Electronics
MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R
***ure Electronics
Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***ure Electronics
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 4.9A 8-SOIC
***nell
MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 6.2A; Current Id Max: 6.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.035ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V
***ical
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R
***emi
30V Dual N & P-Channel PowerTrench® MOSFET
***eco
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE
***ark
TAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET
***el Electronic
SMALL SIGNAL BIPOLAR TRANSISTOR
***rchild Semiconductor
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***et
Trans MOSFET P-CH -30V -5.8A 8-Pin SO T/R
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Electronic
MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC
***ark
Mosfet Bvdss: 25V~30V So-8 T&r 2.5K
***nell
MOSFET, AEC-Q101, P-CH, -5.8A, -30V, SOIC; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 5.8A; On Resistance Rds(on): 0.019ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
型号 制造商 描述 库存 价格
NDS8858H
DISTI # NDS8858HTR-ND		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NDS8858H
    DISTI # NDS8858HCT-ND    		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NDS8858H
      DISTI # NDS8858HDKR-ND      		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NDS8858H
        DISTI # 34C1625        		ON SemiconductorDUAL N/P CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
          NDS8858HFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		19893
          • 1000:$0.5300
          • 500:$0.5500
          • 100:$0.5800
          • 25:$0.6000
          • 1:$0.6500
          NDS8858H
          DISTI # 512-NDS8858H          		ON SemiconductorMOSFET CMOSFET Half Bridge
          RoHS: Compliant          		0
            NDS8858HFairchild Semiconductor Corporation6300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET640
            • 371:$0.7500
            • 168:$0.8100
            • 1:$1.8000
            NDS8858HNational Semiconductor Corporation 1531
              NDS8858HFairchild Semiconductor Corporation 1959
                NDS8858HFairchild Semiconductor Corporation 672
                  NDS8858HFairchild Semiconductor Corporation 2286
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                    可用性
                    库存:
                    Available
                    订购:
                    3500
                    输入数量:
                    NDS8858H的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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