SI4963BDY-T1-GE3

SI4963BDY-T1-GE3
Mfr. #:
SI4963BDY-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
生命周期:
制造商新产品。
数据表:
SI4963BDY-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SI4963BDY-T1-GE3 更多信息
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
-
打包
卷带 (TR)
部分别名
SI4963BDY-GE3
单位重量
0.006596 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双重的
FET型
2 P-Channel (Dual)
最大功率
1.1W
晶体管型
2 P-Channel
漏源电压 Vdss
20V
输入电容-Ciss-Vds
-
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
4.9A
Rds-On-Max-Id-Vgs
32 mOhm @ 6.5A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
栅极电荷-Qg-Vgs
21nC @ 4.5V
钯功耗
1.1 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
55 ns
上升时间
40 ns
VGS-栅极-源极-电压
12 V
Id 连续漏极电流
4.9 A
Vds-漏-源-击穿电压
- 20 V
Rds-On-Drain-Source-Resistance
32 mOhms
晶体管极性
P-通道
典型关断延迟时间
80 ns
典型开启延迟时间
30 ns
通道模式
增强
Tags
SI4963, SI496, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
***i-Key
MOSFET 2P-CH 20V 4.9A 8SOIC
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
型号 制造商 描述 库存 价格
SI4963BDY-T1-GE3
DISTI # SI4963BDY-T1-GE3-ND
Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8167
SI4963BDY-T1-GE3
DISTI # SI4963BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4963BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.6379
  • 5000:$0.6189
  • 10000:$0.5939
  • 15000:$0.5779
  • 25000:$0.5619
SI4963BDY-T1-GE3
DISTI # 781-SI4963BDY-GE3
Vishay IntertechnologiesMOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
RoHS: Compliant
0
  • 2500:$0.6150
  • 5000:$0.5840
  • 10000:$0.5620
图片 型号 描述
SI4963BDY-T1-E3

Mfr.#: SI4963BDY-T1-E3

OMO.#: OMO-SI4963BDY-T1-E3

MOSFET 20V 6.2A 2W
SI4963BDY-T1-GE3

Mfr.#: SI4963BDY-T1-GE3

OMO.#: OMO-SI4963BDY-T1-GE3

MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
SI4963BDY-T1-GE3

Mfr.#: SI4963BDY-T1-GE3

OMO.#: OMO-SI4963BDY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V
SI4963BDY-T1-E3

Mfr.#: SI4963BDY-T1-E3

OMO.#: OMO-SI4963BDY-T1-E3-VISHAY

MOSFET 2P-CH 20V 4.9A 8-SOIC
可用性
库存:
Available
订购:
1500
输入数量:
SI4963BDY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.84
US$0.84
10
US$0.80
US$8.01
100
US$0.76
US$75.86
500
US$0.72
US$358.20
1000
US$0.67
US$674.30
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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