SI3588DV-T1-E3

Mfr. #:: SI3588DV-T1-E3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 20V 3.0/2.2A
生命周期:: 制造商新产品。
数据表:: SI3588DV-T1-E3 数据表
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HTML Datasheet:: SI3588DV-T1-E3 Datasheet SI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
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产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: 数码卷轴

部分别名: SI3588DV-E3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-TSOP

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 830mW, 83mW

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 2.5A, 570mA

Rds-On-Max-Id-Vgs: 80 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 450mV @ 250μA (Min)

栅极电荷-Qg-Vgs: 7.5nC @ 4.5V

钯功耗: 830 mW

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 30 ns 29 ns

上升时间: 30 ns 29 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 2.5 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 80 mOhms 145 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 28 ns 24 ns

典型开启延迟时间: 12 ns 12 ns

通道模式: 增强

Tags: SI3588D, SI3588, SI358, SI35, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3588DV-T1-E3 描述

***ical: Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R

***i-Key: MOSFET N/P-CH 20V 2.5A 6TSOP

***ser: Dual MOSFETs 20V 3.0/2.2A

***nell: MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V

Market price

型号	制造商	描述	库存	价格
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI3588DV-T1-E3 DISTI # 781-SI3588DV-E3	Vishay Intertechnologies	MOSFET 20V 3.0/2.2A RoHS: Compliant	0
SI3588DV-T1-E3 DISTI # 1612643RL	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320
SI3588DV-T1-E3 DISTI # 1612643	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320

图片	型号	描述
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3	MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
	Mfr.#: SI3588DV-T1-E3 OMO.#: OMO-SI3588DV-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 3.0/2.2A
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3-VISHAY	MOSFET N/P-CH 20V 2.5A 6-TSOP
	Mfr.#: SI3588DV-T1E3 OMO.#: OMO-SI3588DV-T1E3-1190	全新原装

SI3588DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes