BSC014NE2LSIXT

Mfr. #:: BSC014NE2LSIXT
制造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
生命周期:: 制造商新产品。
数据表:: BSC014NE2LSIXT 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: BSC014NE2LSIXT 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: 优化MOS

打包: 卷轴

部分别名: BSC014NE2LSIATMA1 SP000911336

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TDSON-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 N-Channel

钯功耗: 74 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 3.6 ns

上升时间: 5 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 25 V

VGS-th-Gate-Source-Threshold-Voltage: 1.2 V to 2 V

Rds-On-Drain-Source-Resistance: 1.4 mOhms

晶体管极性: N通道

典型关断延迟时间: 25 ns

典型开启延迟时间: 5 ns

Qg-门电荷: 39 nC

正向跨导最小值: 140 S

Tags: BSC014NE, BSC014, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC014NE2LSIXT 更多信息

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

型号	制造商	描述	库存	价格
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10In Stock	1000:$0.7818 500:$0.9687 100:$1.2258 10:$1.5300 1:$1.7200
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10In Stock	1000:$0.7818 500:$0.9687 100:$1.2258 10:$1.5300 1:$1.7200
BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.6819
BSC014NE2LSI DISTI # BSC014NE2LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.4749 10000:$0.4579 20000:$0.4409 30000:$0.4259 50000:$0.4189
BSC014NE2LSIATMA1 DISTI # 50Y1794	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, 150DEG C, 74W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1:$1.3600 10:$1.1600 25:$1.0700 50:$0.9780 100:$0.8870 250:$0.8360 500:$0.7840 1000:$0.6190
BSC014NE2LSIATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	50	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
BSC014NE2LSI DISTI # 726-BSC014NE2LSIXT	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	4578	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190 5000:$0.5490
BSC014NE2LSIXT DISTI # 726-BSC014NE2LSIATMA	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	13	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190 5000:$0.5490
BSC014NE2LSIATMA1 DISTI # 726-BSC014NE2LSI	Infineon Technologies AG	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant	14	1:$1.3600 10:$1.1600 100:$0.8870 500:$0.7840 1000:$0.6190
BSC014NE2LSIATMA1 DISTI # 2480708RL	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	0	1:$2.1600 10:$1.8400 100:$1.4100
BSC014NE2LSIATMA1 DISTI # 2480708	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	3690	1:$2.1600 10:$1.8400 100:$1.4100
BSC014NE2LSIATMA1 DISTI # 2480708	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant	3691	5:£1.1300 25:£1.0300 100:£0.8050 250:£0.7350 500:£0.6650

图片	型号	描述
	Mfr.#: BSC014N06NSTATMA1 OMO.#: OMO-BSC014N06NSTATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC014N06NS OMO.#: OMO-BSC014N06NS	MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014NE2LSI OMO.#: OMO-BSC014NE2LSI	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014NE2LSIATMA1 OMO.#: OMO-BSC014NE2LSIATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC014N03MSGATMA1 OMO.#: OMO-BSC014N03MSGATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC014N03LS OMO.#: OMO-BSC014N03LS-1190	全新原装
	Mfr.#: BSC014N03LSG OMO.#: OMO-BSC014N03LSG-1190	MOSFET, N-CH, 30V, 100A, TDSON-8
	Mfr.#: BSC014N03LSGATMA1 , TDA1 OMO.#: OMO-BSC014N03LSGATMA1-TDA1-1190	全新原装
	Mfr.#: BSC014N04LS OMO.#: OMO-BSC014N04LS-1190	MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
	Mfr.#: BSC014NE2LSIATMA1 OMO.#: OMO-BSC014NE2LSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 33A TDSON-8

BSC014NE2LSIXT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes