IS43TR16640BL-125JBLI-TR

Mfr. #:: IS43TR16640BL-125JBLI-TR
制造商:: ISSI
描述:: DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT, T&R
生命周期:: 制造商新产品。
数据表:: IS43TR16640BL-125JBLI-TR 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IS43TR16640BL-125JBLI-TR 更多信息

产品属性
属性值

制造商：: 国际空间站

产品分类：: 动态随机存取存储器

RoHS：: Y

类型：: SDRAM - DDR3L

包装/案例：: BGA-96

系列：: IS43TR16640BL

打包：: 卷轴

品牌：: 国际空间站

湿气敏感：: 是的

产品类别：: 动态随机存取存储器

出厂包装数量：: 1500

子类别：: 内存和数据存储

Tags: IS43TR16640BL-125J, IS43TR16640BL-12, IS43TR16640BL, IS43TR16640B, IS43TR166, IS43TR1, IS43T, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43TR16640BL-125JBLI-TR 评级和评论

K***r

5 Stars.

2019-07-30

N***c

All ok. Seller recommend

2019-08-20

A***r

Everything is fine, it came out in less than 2 weeks

2019-09-24

IS43TR16640BL-125JBLI-TR 描述

***ark: 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT, T&R

***et: DRAM Chip DDR3L SDRAM 1G-Bit 64Mx16 1.35V 96-Pin TW-BGA T/R

***I SCT: DDR SDRAM, 64Mx16, 1.35V, 8K, BGA-96,RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***or: IC DRAM 1GBIT PARALLEL 96TWBGA

IS43TR16640BL-125JBLI-TR 更多信息

DDR3 SDRAM: ISSI DDR3 SDRAM delivers high-speed data transfer rates up to 2133Mbps in a small BGA-96 or BGA-78 package. ISSI DDR3 SDRAM is available in a 64Mx16, 128Mx8, 128Mx16, 256Mx8, or 256Mx16 organization. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, and programmable CAS latency. The ISSI DDR3 SDRAMs are well-suited for telecom & networking, automotive, and industrial embedded computing.

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