IPB70N04S3-07

Mfr. #:: IPB70N04S3-07
制造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
生命周期:: 制造商新产品。
数据表:: IPB70N04S3-07 数据表
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产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS-T

打包: 卷轴

部分别名: IPB70N04S307ATMA1 IPB70N04S307XT SP000279556

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 79 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 7 ns

上升时间: 8 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 80 A

Vds-漏-源-击穿电压: 40 V

Rds-On-Drain-Source-Resistance: 6.2 mOhms

晶体管极性: N通道

典型关断延迟时间: 17 ns

典型开启延迟时间: 13 ns

通道模式: 增强

Tags: IPB70N04, IPB70N0, IPB70N, IPB70, IPB7, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB70N04S3-07 描述

*** Electronic Components: IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

***et: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.22uF 6.3Volts X6S 10%

*** Electronics: MOSFET OPTIMOS -T PWR-TRANS 40V 70A 6.8mOhms

***ronik: N-CH 40V 80A 6mOhm TO263-3 RoHSconf

***ineon SCT: 40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS

***et: Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263

*** Electronic Components: MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

***i-Key: OPTLMOS N-CHANNEL POWER MOSFET

*** International: IPB80N04S3-06 Infineon Technologies

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Chip Resistor - Surface Mount 63.4kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 63.4K OHM 1% 1/10W 0402

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263AB ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***emi: Power MOSFET 74 Amps, 30 Volts N-Channel D2PAK

***ponent Stockers USA: 74 A 30 V 0.0093 ohm N-CHANNEL Si POWER MOSFET

***ser: MOSFETs- Power and Small Signal 30V 74A N-Channel

***r Electronics: Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 30V 74A N-Channel No-Cancel/No-Return

***i-Key: MOSFET N-CH 30V 74A D2PAK

***r Electronics: Power Field-Effect Transistor, 74A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

*** Electronics: N-CHANNEL POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor

***ure Electronics: Single N-Channel 40 V 4.2 mOhm 33 nC OptiMOS Power Mosfet - D2PAK

***ark: Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

***icroelectronics SCT: Automotive Power Discrete, 40V, 80A, D2PAK, Tape and Reel

***el Electronic: IC OFFLINE SWIT OTP CV/CC 8DIP

Market price

型号	制造商	描述	库存	价格
IPB70N04S3-07 DISTI # IPB70N04S3-07TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB70N04S3-07 DISTI # IPB70N04S3-07CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB70N04S3-07 DISTI # IPB70N04S3-07DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB70N04S307ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS: Compliant	2500	1000:$0.4000 500:$0.4200 100:$0.4400 25:$0.4500 1:$0.4900
IPB70N04S3-07 DISTI # 726-IPB70N04S3-07	Infineon Technologies AG	MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T RoHS: Compliant	0
IPB70N04S307ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET N-CHANNEL_30/40V	0

图片	型号	描述
	Mfr.#: IPB70N10S312ATMA1 OMO.#: OMO-IPB70N10S312ATMA1	MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
	Mfr.#: IPB70N10S3-12 OMO.#: OMO-IPB70N10S3-12	MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
	Mfr.#: IPB70N04S406ATMA1 OMO.#: OMO-IPB70N04S406ATMA1	MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2
	Mfr.#: IPB70N12S311ATMA1 OMO.#: OMO-IPB70N12S311ATMA1	MOSFET N-CHANNEL 100+
	Mfr.#: IPB70N10S3L12ATMA1 OMO.#: OMO-IPB70N10S3L12ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 70A TO263-3
	Mfr.#: IPB70N10SL16ATMA1 OMO.#: OMO-IPB70N10SL16ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 70A TO263-3
	Mfr.#: IPB70N12S3L12ATMA1 OMO.#: OMO-IPB70N12S3L12ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL_100+
	Mfr.#: IPB70N04S4-06 OMO.#: OMO-IPB70N04S4-06-1190	MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2
	Mfr.#: IPB70N04S406 OMO.#: OMO-IPB70N04S406-1190	Power Field-Effect Transistor, 70A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB70N04S3-07 OMO.#: OMO-IPB70N04S3-07-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

IPB70N04S3-07

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes