STGB30H65FB

STGB30H65FB
Mfr. #:
STGB30H65FB
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
生命周期:
制造商新产品。
数据表:
STGB30H65FB 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGB30H65FB 更多信息 STGB30H65FB Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
技术:
包装/案例:
D2PAK-3
安装方式:
贴片/贴片
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.55 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
60 A
Pd - 功耗:
260 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGB30H65FB
品牌:
意法半导体
栅极-发射极漏电流:
250 nA
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
Tags
STGB30H, STGB30, STGB3, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Ptd High Voltage
***et
PTD HIGH VOLTAGE
型号 制造商 描述 库存 价格
STGB30H65FB
DISTI # STGB30H65FB-ND
STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.4464
STGB30H65FB
DISTI # STGB30H65FB
STMicroelectronicsPTD HIGH VOLTAGE - Tape and Reel (Alt: STGB30H65FB)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 2000:$1.2900
  • 1000:$1.3900
STGB30H65FB
DISTI # 48AC3283
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.1900
STGB30H65FB
DISTI # 511-STGB30H65FB
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package100
  • 1:$2.8000
  • 10:$2.3800
  • 100:$1.9000
  • 500:$1.6700
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
图片 型号 描述
STGB30H65FB

Mfr.#: STGB30H65FB

OMO.#: OMO-STGB30H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
STGB30H60DLLFBAG

Mfr.#: STGB30H60DLLFBAG

OMO.#: OMO-STGB30H60DLLFBAG

IGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGB30H60DFB

Mfr.#: STGB30H60DFB

OMO.#: OMO-STGB30H60DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGB30NC60KT4

Mfr.#: STGB30NC60KT4

OMO.#: OMO-STGB30NC60KT4

IGBT Transistors 31 A-600 V Rugged IGBT
STGB30NC60WT4

Mfr.#: STGB30NC60WT4

OMO.#: OMO-STGB30NC60WT4

IGBT Transistors 3A 6V ULT FAST IGBT
STGB30H60DF

Mfr.#: STGB30H60DF

OMO.#: OMO-STGB30H60DF-STMICROELECTRONICS

IGBT 600V 60A 260W D2PAK
STGB3HF60HD

Mfr.#: STGB3HF60HD

OMO.#: OMO-STGB3HF60HD-STMICROELECTRONICS

IGBT 600V 7.5A D2PAK
STGB30H60DLFB

Mfr.#: STGB30H60DLFB

OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, HB
STGB3NB60FDT4

Mfr.#: STGB3NB60FDT4

OMO.#: OMO-STGB3NB60FDT4-STMICROELECTRONICS

IGBT 600V 6A 68W D2PAK
STGB3NB60HD

Mfr.#: STGB3NB60HD

OMO.#: OMO-STGB3NB60HD-1190

全新原装
可用性
库存:
100
订购:
2083
输入数量:
STGB30H65FB的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.80
US$2.80
10
US$2.38
US$23.80
100
US$1.90
US$190.00
500
US$1.67
US$835.00
1000
US$1.38
US$1 380.00
2500
US$1.29
US$3 225.00
5000
US$1.24
US$6 200.00
10000
US$1.19
US$11 900.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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