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IXTA02N250HV

IXTA02N250HV
Mfr. #:
IXTA02N250HV
制造商:
Littelfuse
描述:
MOSFET SMD N-CHANNEL POWER MOSFET
生命周期:
制造商新产品。
数据表:
IXTA02N250HV 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTA02N250HV DatasheetIXTA02N250HV Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商：
IXYS
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-263AB-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
2.5 kV
Id - 连续漏极电流：
200 mA
Rds On - 漏源电阻：
450 Ohms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
7.4 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
83 W
配置：
单身的
频道模式：
增强
打包：
管子
系列：
非常高的电压
晶体管类型：
1 N-Channel
品牌：
IXYS
正向跨导 - 最小值：
88 mS
秋季时间：
33 ns
产品类别：
MOSFET
上升时间：
19 ns
出厂包装数量：
50
子类别：
MOSFET
典型关断延迟时间：
32 ns
典型的开启延迟时间：
19 ns
单位重量：
0.062435 oz
Tags
IXTA02N2, IXTA02, IXTA0, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
***i-Key
MOSFET N-CH 2500V 200MA TO263AB
*** Electronics
MOSFET N-CH 2500V 0.2A TO263
***ponent Stockers USA
10.6 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***p One Stop
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS
***ark
Mosfet, N-Ch, 150V, 21A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.044Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***emi
Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ
***ure Electronics
P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263
***ark
MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans MOSFET P-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, P-CH, -75V, -100A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -75V, -100A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -75V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 26.3 mOhm 30 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
***p One Stop
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) TO-263 T/R
***nell
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0203ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
型号 制造商 描述 库存 价格
IXTA02N250HV
DISTI # V36:1790_07768253		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		79
  • 1000:$5.2180
  • 500:$5.4850
  • 250:$5.9710
  • 100:$6.4980
  • 50:$6.6890
  • 25:$7.1710
  • 10:$8.3710
  • 1:$9.1740
IXTA02N250HV
DISTI # IXTA02N250HV-ND		IXYS CorporationMOSFET N-CH 2500V 0.2A TO263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$8.5690
IXTA02N250HV
DISTI # 27534873		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		95
  • 1000:$5.6640
  • 500:$5.9424
  • 250:$6.5088
  • 100:$7.1328
  • 50:$7.2960
  • 25:$7.8528
  • 10:$9.4368
  • 2:$10.4832
IXTA02N250HV
DISTI # 31433598		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		79
  • 2:$9.1740
IXTA02N250HV
DISTI # 747-IXTA02N250HV		IXYS CorporationMOSFET SMD N-CHANNEL POWER MOSFET
RoHS: Compliant		0
  • 1:$10.9200
  • 10:$9.8300
  • 25:$8.1800
  • 50:$7.6000
  • 100:$7.4300
  • 250:$6.7800
  • 500:$6.1900
  • 1000:$5.9000
IXTA02N250HV
DISTI # C1S331700093820		IXYS CorporationTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		95
  • 50:$8.6700
  • 25:$9.4500
  • 10:$9.6600
  • 1:$14.1000
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可用性
库存:
315
订购:
2298
输入数量:
IXTA02N250HV的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$10.92
US$10.92
10
US$9.83
US$98.30
25
US$8.18
US$204.50
50
US$7.60
US$380.00
100
US$7.43
US$743.00
250
US$6.78
US$1 695.00
500
US$6.19
US$3 095.00
1000
US$5.90
US$5 900.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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