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HGTG30N60B3D

HGTG30N60B3D
Mfr. #:
HGTG30N60B3D
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V IGBT UFS N-Channel
生命周期:
制造商新产品。
数据表:
HGTG30N60B3D 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.45 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
208 W
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
HGTG30N60B3D
打包：
管子
连续集电极电流 Ic 最大值：
60 A
高度：
20.82 mm
长度：
15.87 mm
宽度：
4.82 mm
品牌：
安森美半导体/飞兆半导体
连续集电极电流：
60 A
栅极-发射极漏电流：
+/- 250 nA
产品类别：
IGBT晶体管
出厂包装数量：
450
子类别：
IGBT
第 # 部分别名：
HGTG30N60B3D_NL
单位重量：
0.225401 oz
Tags
HGTG30N60B3D, HGTG30N60B3, HGTG30N60B, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast
***et
600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
***ser
IGBTs 600V, IGBT UFS N-Channel
***i-Key
IGBT N-CH UFS 600V 30A TO-247
***trelec
IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 200 ns Power dissipation: 208 W
***Semiconductor
600V, PT IGBT
***ment14 APAC
Prices include import duty and tax. IGBT,N CH,600V,30A,TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:208W; Transistor Type:IGBT
***nell
IGBT,N CH,600V,30A,TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:208W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Dissipazione di Potenza Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
型号 制造商 描述 库存 价格
HGTG30N60B3D
DISTI # V99:2348_06359031		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 1:$5.9900
HGTG30N60B3D
DISTI # HGTG30N60B3D-ND		ON SemiconductorIGBT 600V 60A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1604In Stock
  • 900:$4.4340
  • 450:$4.8630
  • 10:$6.1500
  • 1:$6.8100
HGTG30N60B3D
DISTI # 26882380		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 2:$5.9900
HGTG30N60B3D
DISTI # 30618810		ON SemiconductorPTPIGBT TO247 60A 600V58
  • 50:$4.4752
  • 10:$4.7940
  • 4:$6.6045
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€3.7900
  • 10:€3.4900
  • 25:€3.2900
  • 50:€3.1900
  • 100:€3.0900
  • 500:€2.9900
  • 1000:€2.7900
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$4.4900
  • 900:$4.3900
  • 1800:$4.3900
  • 2700:$4.2900
  • 4500:$4.1900
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1592)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.4900
  • 10:$5.8600
  • 25:$5.5900
  • 50:$5.2200
  • 100:$4.8500
  • 250:$4.6400
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorSINGLE IGBT, 600V, 60A,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes456
  • 250:$4.8700
  • 100:$5.0800
  • 50:$5.4500
  • 25:$5.8200
  • 10:$6.0900
  • 1:$6.7200
HGTG30N60B3D
DISTI # 512-HGTG30N60B3D		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Compliant		414
  • 1:$6.4800
  • 10:$5.8500
  • 25:$5.5800
  • 100:$4.8500
  • 250:$4.6300
  • 500:$4.2200
HGTG30N60B3D_Q
DISTI # 512-HGTG30N60B3D_Q		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Not compliant		0
    HGTG30N60B3DFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		16000
    • 1000:$5.0400
    • 500:$5.3100
    • 100:$5.5200
    • 25:$5.7600
    • 1:$6.2000
    HGTG30N60B3DFairchild Semiconductor Corporation 30
      HGTG30N60B3D_R4731Fairchild Semiconductor Corporation 5
        HGTG30N60B3DFairchild Semiconductor Corporation60 A, 600 V, N-CHANNEL IGBT, TO-2473
        • 2:$5.4000
        • 1:$8.1000
        HGTG30N60B3D
        DISTI # HGTG30N60B3D        		ON SemiconductorTransistor: IGBT,600V,30A,208W,TO247256
        • 1:$6.5700
        • 3:$5.9700
        • 10:$4.9600
        • 30:$4.3400
        • 120:$3.9400
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		676
        • 100:£3.9100
        • 50:£4.2200
        • 10:£4.5100
        • 5:£5.2300
        • 1:£6.0700
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		593
        • 250:$7.3400
        • 100:$7.6800
        • 25:$8.8500
        • 10:$9.2800
        • 1:$10.2700
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        可用性
        库存:
        402
        订购:
        2385
        输入数量:
        HGTG30N60B3D的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$6.48
        US$6.48
        10
        US$5.85
        US$58.50
        25
        US$5.58
        US$139.50
        100
        US$4.85
        US$485.00
        250
        US$4.63
        US$1 157.50
        500
        US$4.22
        US$2 110.00
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