SIA466EDJ-T1-GE3

Mfr. #:: SIA466EDJ-T1-GE3
制造商:: Vishay / Siliconix
描述:: MOSFET 20V Vds 20V Vgs PowerPAK SC-70
生命周期:: 制造商新产品。
数据表:: SIA466EDJ-T1-GE3 数据表
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HTML Datasheet:: SIA466EDJ-T1-GE3 Datasheet SIA466EDJ-T1-GE3 Datasheet (P4-P6)SIA466EDJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
更多信息:: SIA466EDJ-T1-GE3 更多信息

产品属性
属性值

制造商：: 威世

产品分类：: MOSFET

RoHS：: Y

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: PowerPAK-SC70-6

商品名：: 沟槽场效应晶体管

打包：: 卷轴

高度：: 0.75 mm

长度：: 2.05 mm

系列：: 新航

宽度：: 2.05 mm

品牌：: 威世 / Siliconix

产品类别：: MOSFET

出厂包装数量：: 3000

子类别：: MOSFET

Tags: SIA46, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA466EDJ-T1-GE3 描述

***et Europe: Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R

*** Americas: N-CHANNEL 20-V (D-S) MOSFET

SIA466EDJ-T1-GE3 更多信息

SiA466EDJ N-Channel 20V (D-S) MOSFET: Vishay SiA466EDJ is an N-Channel 20V (D-S) MOSFET designed using the SC-70 package with a footprint area of 2.05mm by 2.05mm. It has a typical ESD protection of 2500V and is Rg tested. The SiA466EDJ is typically used for smartphones, mobile computing, DC/DC converters, power management, and load switches.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

型号	制造商	描述	库存	价格
SIA466EDJ-T1-GE3 DISTI # V72:2272_09216178	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	5762	3000:$0.2531 1000:$0.2888 500:$0.3247 250:$0.3713 100:$0.4126 25:$0.4877 10:$0.5960 1:$0.7385
SIA466EDJ-T1-GE3 DISTI # V36:1790_09216178	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	6000000:$0.2338 3000000:$0.2340 600000:$0.2438 60000:$0.2587 6000:$0.2611
SIA466EDJ-T1-GE3 DISTI # SIA466EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 25A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11764In Stock	1000:$0.2968 500:$0.3710 100:$0.4693 10:$0.6120 1:$0.7000
SIA466EDJ-T1-GE3 DISTI # SIA466EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 25A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11764In Stock	1000:$0.2968 500:$0.3710 100:$0.4693 10:$0.6120 1:$0.7000
SIA466EDJ-T1-GE3 DISTI # SIA466EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 25A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.2281 15000:$0.2341 6000:$0.2431 3000:$0.2611
SIA466EDJ-T1-GE3 DISTI # 32435728	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	5762	27:$0.7385
SIA466EDJ-T1-GE3 DISTI # SIA466EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R (Alt: SIA466EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2419 18000:€0.2609 12000:€0.2819 6000:€0.3279 3000:€0.4809
SIA466EDJ-T1-GE3 DISTI # SIA466EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA466EDJ-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.2189 30000:$0.2249 18000:$0.2319 12000:$0.2419 6000:$0.2489
SIA466EDJ-T1-GE3 DISTI # 31Y6760	Vishay Intertechnologies	Trans MOSFET N-CH 20V 25A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 31Y6760) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.4060 500:$0.4290 250:$0.4750 100:$0.5200 50:$0.6030 25:$0.6850 1:$0.8630
SIA466EDJ-T1-GE3 DISTI # 31Y6760	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 25A, POWERPAK SC70-6,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0079ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	865	1000:$0.3280 500:$0.3460 250:$0.3830 100:$0.4200 50:$0.4870 25:$0.5530 1:$0.6970
SIA466EDJ-T1-GE3 DISTI # 96X2659	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 25A, POWERPAK SC70-6,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0079ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	0	50000:$0.2220 30000:$0.2320 20000:$0.2490 10000:$0.2660 5000:$0.2890 1:$0.2950
SIA466EDJ-T1-GE3 DISTI # 78-SIA466EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	2777	1:$0.6800 10:$0.5470 100:$0.4150 500:$0.3430 1000:$0.2740 3000:$0.2480 6000:$0.2310 9000:$0.2220 24000:$0.2140
SIA466EDJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70	Americas -

图片	型号	描述
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	Mfr.#: SIA421DJ-T1-GE3 OMO.#: OMO-SIA421DJ-T1-GE3	MOSFET -30V Vds 20V Vgs PowerPAK SC-70
	Mfr.#: MLG0603P15NHT000 OMO.#: OMO-MLG0603P15NHT000	Fixed Inductors IND 0201 15nH Hi-Q SMD RF IND
	Mfr.#: SBR1U200P1Q-7 OMO.#: OMO-SBR1U200P1Q-7-DIODES	DIODE SBR 200V 1A POWERDI123
	Mfr.#: LMC6762AIMX/NOPB OMO.#: OMO-LMC6762AIMX-NOPB-TEXAS-INSTRUMENTS	IC COMPAR DUAL MICPWR CMOS 8SOIC
	Mfr.#: SIA421DJ-T1-GE3 OMO.#: OMO-SIA421DJ-T1-GE3-VISHAY	MOSFET P-CH 30V 12A SC70-6

SIA466EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes