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IRF640NLPBF

IRF640NLPBF
Mfr. #:
IRF640NLPBF
制造商:
Infineon Technologies
描述:
IGBT Transistors MOSFET MOSFT 200V 18A 150mOhm 44.7nC
生命周期:
制造商新产品。
数据表:
IRF640NLPBF 数据表
交货:
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ECAD Model:
更多信息:
IRF640NLPBF 更多信息
产品属性
属性值
制造商
红外线
产品分类
FET - 单
打包
管子
单位重量
0.084199 oz
安装方式
通孔
包装盒
I2PAK-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
150 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
5.5 ns
上升时间
19 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
18 A
Vds-漏-源-击穿电压
200 V
Rds-On-Drain-Source-Resistance
150 mOhms
晶体管极性
N通道
典型关断延迟时间
23 ns
典型开启延迟时间
10 ns
Qg-门电荷
44.7 nC
正向跨导最小值
6.8 S
通道模式
增强
Tags
IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3
*** Source Electronics
MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型号 制造商 描述 库存 价格
IRF640NLPBF
DISTI # V99:2348_13890573		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 10000:$0.6538
  • 5000:$0.6767
  • 2500:$0.6988
  • 1000:$0.7413
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
  • 1:$1.2932
IRF640NLPBF
DISTI # IRF640NLPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 18A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		2168In Stock
  • 1000:$1.0174
  • 500:$1.2056
  • 100:$1.5191
  • 10:$1.8640
  • 1:$2.0500
IRF640NLPBF
DISTI # 27158271		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		7506
  • 1000:$0.8336
  • 500:$1.0060
  • 100:$1.1491
  • 27:$1.4414
IRF640NLPBF
DISTI # 26198161		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6569
  • 2000:$0.6329
  • 4000:$0.6099
  • 6000:$0.5889
  • 10000:$0.5789
IRF640NLPBF
DISTI # SP001563296		Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.6069
  • 10:€0.5399
  • 25:€0.4859
  • 50:€0.4409
  • 100:€0.4049
  • 500:€0.3729
  • 1000:€0.3469
IRF640NLPBF
DISTI # 63J7350		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes1000
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 70017531		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V
RoHS: Compliant		0
  • 650:$2.1500
IRF640NLPBFInternational Rectifier 
RoHS: Not Compliant		2350
  • 1000:$0.8400
  • 500:$0.8800
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0300
IRF640NLPBF
DISTI # 942-IRF640NLPBF		Infineon Technologies AGMOSFET MOSFT 200V 18A 150mOhm 44.7nC
RoHS: Compliant		731
  • 1:$1.6800
  • 10:$1.4300
  • 100:$1.1400
  • 500:$0.9980
  • 1000:$0.8270
IRF640NLPBF
DISTI # 8312859		Infineon Technologies AGHEXFET N-CH MOSFET 18A 200V TO-262, PK560
  • 5:£1.3020
  • 25:£1.0280
  • 50:£0.9280
  • 125:£0.8260
  • 250:£0.8100
IRF640NLPBF
DISTI # IRF640NLPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,18A,150W,TO262352
  • 1:$1.0200
  • 3:$0.9600
  • 10:$0.8100
  • 100:$0.7300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1000
  • 1:$2.6600
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3200
IRF640NLPBF.
DISTI # 9537511		Infineon Technologies AGN CHANNEL MOSFET, 200V, 18A, TO-262
RoHS: Compliant		64
  • 1:$1.0300
IRF640NLPBF
DISTI # 2576887		Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-262-3
RoHS: Compliant		1025
  • 5:£1.2000
  • 25:£0.8260
  • 100:£0.8220
  • 250:£0.8180
  • 500:£0.7630
IRF640NLPBF
DISTI # C1S322000481453		Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		987
  • 500:$0.8645
  • 100:$0.9661
  • 10:$1.1450
图片 型号 描述
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF

 MOSFET N-Chan 250V 14 Amp
IRF640,IRF640A,IRF640B

Mfr.#: IRF640,IRF640A,IRF640B

OMO.#: OMO-IRF640-IRF640A-IRF640B-1190

 全新原装
IRF640A8H

Mfr.#: IRF640A8H

OMO.#: OMO-IRF640A8H-1190

 全新原装
IRF640FP

Mfr.#: IRF640FP

OMO.#: OMO-IRF640FP-STMICROELECTRONICS

 MOSFET N-CH 200V 18A TO-220FP
IRF640NS

Mfr.#: IRF640NS

OMO.#: OMO-IRF640NS-1190

 MOSFET N-CHANNEL 200V 18A D2PAK, EA
IRF640R

Mfr.#: IRF640R

OMO.#: OMO-IRF640R-1190

 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF643

Mfr.#: IRF643

OMO.#: OMO-IRF643-1190

 Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644NLPBF

Mfr.#: IRF644NLPBF

OMO.#: OMO-IRF644NLPBF-VISHAY

 MOSFET N-CH 250V 14A TO-262
IRF644NSTRLPBF

Mfr.#: IRF644NSTRLPBF

OMO.#: OMO-IRF644NSTRLPBF-VISHAY

 MOSFET N-CH 250V 14A D2PAK
IRF645A

Mfr.#: IRF645A

OMO.#: OMO-IRF645A-1190

 全新原装
可用性
库存:
Available
订购:
2000
输入数量:
IRF640NLPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.51
US$0.51
10
US$0.49
US$4.89
100
US$0.46
US$46.29
500
US$0.44
US$218.60
1000
US$0.41
US$411.50
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