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CSD19531Q5AT

CSD19531Q5AT
Mfr. #:
CSD19531Q5AT
描述:
MOSFET 100V,5.3mOhm,NexFET Power MOSFET
生命周期:
制造商新产品。
数据表:
CSD19531Q5AT 数据表
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更多信息:
CSD19531Q5AT 更多信息 CSD19531Q5AT Product Details
产品属性
属性值
制造商：
德州仪器
产品分类：
MOSFET
RoHS：
E
技术：
硅
安装方式：
贴片/贴片
包装/案例：
VSONP-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
100 A
Rds On - 漏源电阻：
6.4 mOhms
Vgs th - 栅源阈值电压：
2.7 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
37 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
3.3 W
配置：
单身的
频道模式：
增强
商品名：
场效应管
打包：
卷轴
高度：
1 mm
长度：
6 mm
系列：
CSD19531Q5A
晶体管类型：
1 N-Channel
类型：
NexFET 功率 MOSFET
宽度：
4.9 mm
品牌：
德州仪器
正向跨导 - 最小值：
82 S
秋季时间：
5.2 ns
产品类别：
MOSFET
上升时间：
5.8 ns
出厂包装数量：
250
子类别：
MOSFET
典型关断延迟时间：
18.4 ns
典型的开启延迟时间：
6 ns
Tags
CSD19531, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
***nell
MOSFET, N-CHANNEL, 100V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 100V; Résistance Rds(on): 0.0053ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 2.7V; Dissipation de puiss
***ark
Mosfet, N-Channel, 100V, 100A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes
***ure Electronics
N-Channel 100 V 7 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
***et
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
***Yang
Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3
***emi
N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ
***r Electronics
Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***(Formerly Allied Electronics)
AUIRFS3607 N-channel MOSFET Transistor; 80 A; 75 V; 3-Pin D2PAK
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ical
Trans MOSFET N-CH Si 75V 80A Automotive 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Mosfet, N Channel, 75V, 80A, D2Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.00734Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Exhaust; Injection
***nell
MOSFET, N-CH, 75V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00734ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 140W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ure Electronics
Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ark
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
***ure Electronics
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***nell
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***AS INTRUMENTS
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
***AS INSTRUMENTS INCORPORATED
Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD19531Q5AT
DISTI # V39:1801_07248854		Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
RoHS: Compliant		1000
  • 5000:$0.7094
  • 2500:$0.7396
  • 1000:$0.7934
  • 500:$0.9439
  • 250:$1.0589
CSD19531Q5AT
DISTI # V98:2334_07248854		Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
RoHS: Compliant		272
  • 250:$1.0882
  • 100:$1.0996
  • 25:$1.3650
  • 10:$1.3794
  • 1:$1.6202
CSD19531Q5AT
DISTI # 296-37749-1-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8267In Stock
  • 100:$1.4888
  • 10:$1.8530
  • 1:$2.0500
CSD19531Q5AT
DISTI # 296-37749-6-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8267In Stock
  • 100:$1.4888
  • 10:$1.8530
  • 1:$2.0500
CSD19531Q5AT
DISTI # 296-37749-2-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		8250In Stock
  • 1250:$0.9315
  • 750:$1.0150
  • 500:$1.1242
  • 250:$1.2848
CSD19531Q5AT
DISTI # 31040823		Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
RoHS: Compliant		1000
  • 1000:$0.8264
  • 500:$1.0118
  • 250:$1.1583
CSD19531Q5AT
DISTI # 29476215		Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
RoHS: Compliant		272
  • 250:$0.9896
  • 100:$1.0996
  • 25:$1.3650
  • 10:$1.3794
  • 9:$1.6202
CSD19531Q5AT
DISTI # CSD19531Q5AT		Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R (Alt: CSD19531Q5AT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Asia - 0
    CSD19531Q5AT
    DISTI # CSD19531Q5AT    		Trans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R - Tape and Reel (Alt: CSD19531Q5AT)
    RoHS: Compliant
    Min Qty: 500
    Container: Reel    		Americas - 0
    • 500:$0.8469
    • 1000:$0.8059
    • 1500:$0.7789
    • 2500:$0.7529
    • 5000:$0.7319
    CSD19531Q5ATTrans MOSFET N-CH 100V 16A 8-Pin 8VSON T/R - Tape and Reel
    RoHS: Compliant
    Container: Reel    		Americas - 0
      CSD19531Q5AT
      DISTI # 68X2366      		MOSFET Transistor, N Channel, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V RoHS Compliant: Yes8
      • 1:$2.1300
      • 10:$1.8400
      • 25:$1.7200
      • 50:$1.6200
      • 100:$1.5000
      CSD19531Q5A
      DISTI # 595-CSD19531Q5A      		MOSFET 100V 5.3mOhm Pwr MOSFET
      RoHS: Compliant      		3948
      • 1:$1.5500
      • 10:$1.3100
      • 100:$1.0500
      • 500:$0.9190
      • 1000:$0.7620
      • 2500:$0.7090
      • 5000:$0.6830
      • 10000:$0.6570
      CSD19531Q5AT
      DISTI # 595-CSD19531Q5AT      		MOSFET 100V,5.3mOhm,NexFET Power MOSFET
      RoHS: Compliant      		490
      • 1:$1.7200
      • 10:$1.4600
      • 100:$1.1700
      • 250:$1.1700
      • 500:$1.0300
      • 1000:$0.8470
      • 2500:$0.7890
      • 5000:$0.7600
      图片 型号 描述
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      		 MOSFET TRENCH 8 80V NFET POWER MOSFET
      CGA6P3X7R1E226M250AB

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      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 25V 22uF 20% AEC-Q200
      ADT7310TRZ-REEL7

      Mfr.#: ADT7310TRZ-REEL7

      OMO.#: OMO-ADT7310TRZ-REEL7

      		 Board Mount Temperature Sensors .5 Deg C Accurate 16-Bit Digital SPI
      CC0603KRX7R9BB104

      Mfr.#: CC0603KRX7R9BB104

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      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
      UCC24636EVM

      Mfr.#: UCC24636EVM

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      		 Power Management IC Development Tools EVM FOR THE UCC24636 SR CONTROLLER
      ATL431LIBQDBZR

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      		 V-Ref Adjustable 2.5V to 36V 15mA 3-Pin SOT-23 T/R
      NTMFS6H800NT1G

      Mfr.#: NTMFS6H800NT1G

      OMO.#: OMO-NTMFS6H800NT1G-ON-SEMICONDUCTOR

      		 TRENCH 8 80V NFET
      06035L104K4T4A

      Mfr.#: 06035L104K4T4A

      OMO.#: OMO-06035L104K4T4A-428

      		 Cap Ceramic 0.1uF 50V X8L 10% SMD 0603 150C
      CGA6M3X7S2A475K200AB

      Mfr.#: CGA6M3X7S2A475K200AB

      OMO.#: OMO-CGA6M3X7S2A475K200AB-TDK

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 4.7uF 100volts X7S +/-10%
      可用性
      库存:
      Available
      订购:
      1992
      输入数量:
      CSD19531Q5AT的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.91
      US$1.91
      10
      US$1.62
      US$16.20
      100
      US$1.29
      US$129.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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