HMC717LP3ETR

HMC717LP3ETR
Mfr. #:
HMC717LP3ETR
制造商:
HITTITE
描述:
GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
生命周期:
制造商新产品。
数据表:
HMC717LP3ETR 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
赫梯
产品分类
集成电路芯片
Tags
HMC717, HMC71, HMC7, HMC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Applications Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points
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The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). Applications Cellular/3G and LTE/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio
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new, original packaged
型号 制造商 描述 库存 价格
HMC717LP3ETR
DISTI # VAH:2490_16964656
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
HMC717LP3ETR
DISTI # 31280879
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz100
  • 100:$21.0700
HMC717LP3ETR
DISTI # 26077661
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
图片 型号 描述
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717LP3ETR

Mfr.#: HMC717LP3ETR

OMO.#: OMO-HMC717LP3ETR-1190

GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
HMC717

Mfr.#: HMC717

OMO.#: OMO-HMC717-1190

全新原装
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717LP3E

Mfr.#: HMC717LP3E

OMO.#: OMO-HMC717LP3E-ANALOG-DEVICES

IC RF AMP GP 4.8GHZ-6GHZ 16QFN
可用性
库存:
Available
订购:
2000
输入数量:
HMC717LP3ETR的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.68
US$2.68
10
US$2.55
US$25.51
100
US$2.42
US$241.65
500
US$2.28
US$1 141.15
1000
US$2.15
US$2 148.00
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