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MWE6IC9100NR1

MWE6IC9100NR1
Mfr. #:
MWE6IC9100NR1
制造商:
NXP / Freescale
描述:
RF Amplifier 100W 26V GSM
生命周期:
制造商新产品。
数据表:
MWE6IC9100NR1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
恩智浦
产品分类：
射频放大器
RoHS：
E
安装方式：
贴片/贴片
类型：
功率放大器
工作频率：
869 MHz to 960 MHz
获得：
33.5 dB
最高工作温度：
+ 200 C
打包：
卷轴
品牌：
恩智浦/飞思卡尔
通道数：
1 Channel
输入回波损耗：
15 dB
湿气敏感：
是的
产品类别：
射频放大器
出厂包装数量：
500
子类别：
无线和射频集成电路
电源电压 - 最大值：
32 V
电源电压 - 最小值：
26 V
单位重量：
0.058255 oz
Tags
MWE6IC9100N, MWE6IC91, MWE6I, MWE6, MWE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R
***el Electronic
IC RF AMP GSM 960MHZ TO270 WB-14
***i-Key
IC PWR AMP RF LDMOS TO270-14
***escale Semiconductor
GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V
***ical
RF Amp Chip Single Power Amp 2.05GHz 32V 14-Pin TO-270 WB EP T/R
***ponent Stockers USA
1805 MHz - 2050 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 32 W Avg., 28 V
***et
RF Amp Chip Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R
***i-Key
IC PWR AMP RF 2170MHZ TO-270-14
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
***W
Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720
***ical
RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin TO-270 WB T/R
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
***ical
RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin(12+2Tab) TO-270 WB GULL T/R
***W
Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V
***ical
RF Amp Module Single Power Amp 2.17GHz 32V 15-Pin TO-270 W T/R
***i-Key
IC AMP PWR RF 2100MHZ TO270-14
***ponent Stockers USA
TELECOM CELLULAR RF AND BASEBAND CIRCUIT PDFM14
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V
***et
RF Amp Chip Dual Power Amplifier 2170MHz 32V 14-Pin TO-270WB T/R
***W
Amplifier,1805 to 2170 MHz, 12 W, Typ Gain in dB is 31.5 @ 2170 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R
型号 制造商 描述 库存 价格
MWE6IC9100NR1
DISTI # MWE6IC9100NR1-ND		NXP SemiconductorsIC RF AMP GSM 960MHZ TO270 WB-14
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
    MWE6IC9100NR1
    DISTI # MWE6IC9100NR1    		Avnet, Inc.RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R - Bulk (Alt: MWE6IC9100NR1)
    Min Qty: 6
    Container: Bulk    		Americas - 0
    • 60:$58.0900
    • 30:$59.1900
    • 18:$61.4900
    • 12:$63.9900
    • 6:$66.5900
    MWE6IC9100NR1
    DISTI # 841-MWE6IC9100NR1    		NXP SemiconductorsRF Amplifier 100W 26V GSM
    RoHS: Compliant    		0
      MWE6IC9100NR1Freescale SemiconductorNarrow Band High Power Amplifier, 869MHz Min, 960MHz Max
      RoHS: Compliant      		149
      • 1000:$60.1600
      • 500:$63.3200
      • 100:$65.9300
      • 25:$68.7500
      • 1:$74.0400
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      OMO.#: OMO-MWE6IC9100NR1

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      MWE6IC9100NB

      Mfr.#: MWE6IC9100NB

      OMO.#: OMO-MWE6IC9100NB-1190

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      MWE6IC9080NBR1

      Mfr.#: MWE6IC9080NBR1

      OMO.#: OMO-MWE6IC9080NBR1-NXP-SEMICONDUCTORS

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      MWE6IC9080GNR1

      Mfr.#: MWE6IC9080GNR1

      OMO.#: OMO-MWE6IC9080GNR1-NXP-SEMICONDUCTORS

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      可用性
      库存:
      Available
      订购:
      3500
      输入数量:
      MWE6IC9100NR1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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