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IPW60R037P7XKSA1

IPW60R037P7XKSA1
Mfr. #:
IPW60R037P7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
IPW60R037P7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPW60R037P7XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
76 A
Rds On - 漏源电阻：
30 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
121 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
255 W
配置：
单身的
频道模式：
增强
商品名：
酷摩
打包：
管子
系列：
CoolMOS P7
晶体管类型：
1 N-Channel
品牌：
英飞凌科技
秋季时间：
4 ns
产品类别：
MOSFET
上升时间：
21 ns
出厂包装数量：
240
子类别：
MOSFET
典型关断延迟时间：
90 ns
典型的开启延迟时间：
22 ns
第 # 部分别名：
IPW60R037P7 SP001606060
单位重量：
0.211644 oz
Tags
IPW60R037, IPW60R03, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600V 37 mOhm 121 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型号 制造商 描述 库存 价格
IPW60R037P7XKSA1
DISTI # V99:2348_17076896		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube120
  • 500:$8.0010
  • 250:$8.3400
  • 100:$8.8160
  • 50:$10.0540
  • 25:$10.5130
  • 10:$11.0740
  • 1:$12.2320
IPW60R037P7XKSA1
DISTI # IPW60R037P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 76A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		265In Stock
  • 720:$7.0183
  • 240:$8.0597
  • 25:$9.2824
  • 10:$9.7350
  • 1:$10.7800
IPW60R037P7XKSA1
DISTI # 33368677		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube240
  • 2:$5.4011
IPW60R037P7XKSA1
DISTI # 32004980		Infineon Technologies AGTrans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube120
  • 2:$12.2320
IPW60R037P7XKSA1
DISTI # SP001606060		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001606060)
RoHS: Compliant
Min Qty: 1		Europe - 240
  • 1000:€4.6900
  • 500:€5.0900
  • 100:€5.2900
  • 50:€5.4900
  • 25:€5.6900
  • 10:€5.8900
  • 1:€6.4900
IPW60R037P7XKSA1
DISTI # IPW60R037P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R037P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$5.3900
  • 1440:$5.4900
  • 960:$5.6900
  • 480:$5.8900
  • 240:$6.1900
IPW60R037P7XKSA1
DISTI # IPW60R037P7		Infineon Technologies AGHIGH POWER_NEW (Alt: IPW60R037P7)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IPW60R037P7XKSA1
    DISTI # 45AC7169    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:76A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes914
    • 500:$6.7500
    • 250:$7.4000
    • 100:$7.7500
    • 50:$8.3400
    • 25:$8.9300
    • 10:$9.3600
    • 1:$10.3500
    IPW60R037P7XKSA1
    DISTI # 726-IPW60R037P7XKSA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		4702
    • 1:$10.2500
    • 10:$9.2700
    • 25:$8.8400
    • 100:$7.6700
    • 250:$7.3300
    • 500:$6.6800
    • 1000:$5.8200
    IPW60R037P7XKSA1
    DISTI # IPW60R037P7    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,48A,255W,PG-TO247-3236
    • 30:$7.3500
    • 10:$8.1800
    • 3:$9.2600
    • 1:$10.2900
    IPW60R037P7XKSA1
    DISTI # 2803403    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-31583
    • 100:£5.9700
    • 50:£6.4200
    • 10:£6.8700
    • 5:£7.9800
    • 1:£8.5500
    IPW60R037P7XKSA1
    DISTI # 2803403    		Infineon Technologies AGMOSFET, N-CH, 600V, 76A, TO-247-3
    RoHS: Compliant    		874
    • 250:$8.6400
    • 100:$8.9000
    • 50:$9.3900
    • 10:$9.9200
    • 5:$11.2200
    • 1:$12.0000
    IPW60R037P7XKSA1
    DISTI # XSKDRABV0049857    		Infineon Technologies AG 
    RoHS: Compliant    		450 in Stock0 on Order
    • 450:$7.5600
    • 240:$8.1000
    图片 型号 描述
    IPW60R031CFD7XKSA1

    Mfr.#: IPW60R031CFD7XKSA1

    OMO.#: OMO-IPW60R031CFD7XKSA1

    		 MOSFET HIGH POWER_NEW
    IPZA60R037P7XKSA1

    Mfr.#: IPZA60R037P7XKSA1

    OMO.#: OMO-IPZA60R037P7XKSA1

    		 MOSFET HIGH POWER_NEW
    CRCW1206100RJNEAC

    Mfr.#: CRCW1206100RJNEAC

    OMO.#: OMO-CRCW1206100RJNEAC

    		 Thick Film Resistors - SMD 1/4Watt 100ohms 5% Commercial Use
    AS0805KKX7R9BB104

    Mfr.#: AS0805KKX7R9BB104

    OMO.#: OMO-AS0805KKX7R9BB104

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 10% 50V AEC-Q200
    C1210X474KARACAUTO

    Mfr.#: C1210X474KARACAUTO

    OMO.#: OMO-C1210X474KARACAUTO

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.47uF X7R 1210 10% AEC-Q200
    1853890

    Mfr.#: 1853890

    OMO.#: OMO-1853890

    		 Cable Glands, Strain Reliefs & Cord Grips VC-K-KV-PG21( 7-10 5
    CRCW12064K70FKEBC

    Mfr.#: CRCW12064K70FKEBC

    OMO.#: OMO-CRCW12064K70FKEBC-VISHAY-DALE

    		 RES 4.7K OHM 1% 1/4W 1206
    CRCW1206100RJNEAC

    Mfr.#: CRCW1206100RJNEAC

    OMO.#: OMO-CRCW1206100RJNEAC-VISHAY-DALE

    		 D25/CRCW1206-C 200 100R 5% ET1
    C0805C103K1HACAUTO

    Mfr.#: C0805C103K1HACAUTO

    OMO.#: OMO-C0805C103K1HACAUTO-1190

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X8R 0805 10% AEC-Q200
    C0402S102K5RAC7867

    Mfr.#: C0402S102K5RAC7867

    OMO.#: OMO-C0402S102K5RAC7867-KEMET

    		 CAP CER 1000PF 50V X7R 0402
    可用性
    库存:
    Available
    订购:
    1987
    输入数量:
    IPW60R037P7XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$10.25
    US$10.25
    10
    US$9.27
    US$92.70
    25
    US$8.84
    US$221.00
    100
    US$7.67
    US$767.00
    250
    US$7.33
    US$1 832.50
    500
    US$6.68
    US$3 340.00
    1000
    US$5.82
    US$5 820.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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