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SI2308CDS-T1-GE3

SI2308CDS-T1-GE3
Mfr. #:
SI2308CDS-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 60V Vds 20V Vgs SOT-23
生命周期:
制造商新产品。
数据表:
SI2308CDS-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI2308CDS-T1-GE3 DatasheetSI2308CDS-T1-GE3 Datasheet (P4-P6)SI2308CDS-T1-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SI2308CDS-T1-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SOT-23-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
2.6 A
Rds On - 漏源电阻：
200 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
2 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1.6 W
配置：
单身的
频道模式：
增强
打包：
卷轴
系列：
Si2308CDS
品牌：
威世 / Siliconix
正向跨导 - 最小值：
3.2 S
秋季时间：
16 ns
产品类别：
MOSFET
上升时间：
25 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
10 ns
典型的开启延迟时间：
23 ns
Tags
SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R
***ical
Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 60V 2.6A SOT23-3
***ark
Mosfet, N-Ch, 60V, 2.6A, 150Deg C, 1.6W; Transistor Polarity:n Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.12Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.6W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 2.6A, 150°C, 1.6W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.6A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.12ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:1.6W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型号 制造商 描述 库存 价格
SI2308CDS-T1-GE3
DISTI # V72:2272_21388861		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET3582
  • 75000:$0.0859
  • 30000:$0.0875
  • 15000:$0.0889
  • 6000:$0.0903
  • 3000:$0.0919
  • 1000:$0.1067
  • 500:$0.1377
  • 250:$0.1625
  • 100:$0.1805
  • 50:$0.2170
  • 25:$0.2652
  • 10:$0.2946
  • 1:$0.4389
SI2308CDS-T1-GE3
DISTI # V99:2348_21388861		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
    SI2308CDS-T1-GE3
    DISTI # V36:1790_21388861    		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3CT-ND      		Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		2440In Stock
      • 1000:$0.1236
      • 500:$0.1648
      • 100:$0.2198
      • 10:$0.3230
      • 1:$0.4000
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		2440In Stock
      • 1000:$0.1236
      • 500:$0.1648
      • 100:$0.2198
      • 10:$0.3230
      • 1:$0.4000
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3TR-ND      		Vishay SiliconixMOSFET N-CH 60V 2.6A SOT23-3
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 30000:$0.0889
      • 15000:$0.0967
      • 6000:$0.1033
      • 3000:$0.1100
      SI2308CDS-T1-GE3
      DISTI # 30287441      		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET3582
      • 75000:$0.0923
      • 30000:$0.0941
      • 15000:$0.0956
      • 6000:$0.0971
      • 3000:$0.0988
      • 1000:$0.1147
      • 500:$0.1480
      • 250:$0.1747
      • 100:$0.1940
      • 71:$0.2333
      SI2308CDS-T1-GE3
      DISTI # SI2308CDS-T1-GE3      		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3)
      RoHS: Compliant
      Min Qty: 6000
      Container: Tape and Reel      		Asia - 0
        SI2308CDS-T1-GE3
        DISTI # SI2308CDS-T1-GE3        		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308CDS-T1-GE3)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 30000:$0.0809
        • 15000:$0.0829
        • 9000:$0.0859
        • 6000:$0.0889
        • 3000:$0.0919
        SI2308CDS-T1-GE3
        DISTI # SI2308CDS-T1-GE3        		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 2.1A ID 3-Pin SOT-23 T/R (Alt: SI2308CDS-T1-GE3)
        RoHS: Compliant
        Min Qty: 1
        Container: Tape and Reel        		Europe - 0
        • 1000:€0.0869
        • 500:€0.0879
        • 100:€0.0899
        • 50:€0.0929
        • 25:€0.1009
        • 10:€0.1169
        • 1:€0.1719
        SI2308CDS-T1-GE3
        DISTI # 59AC7474        		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
        • 50000:$0.0820
        • 30000:$0.0910
        • 20000:$0.0980
        • 10000:$0.1100
        • 5000:$0.1260
        • 1:$0.1340
        SI2308CDS-T1-GE3
        DISTI # 78AC6535        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2232
        • 1000:$0.1160
        • 500:$0.1550
        • 250:$0.1730
        • 100:$0.1920
        • 50:$0.2230
        • 25:$0.2540
        • 10:$0.2850
        • 1:$0.4240
        SI2308CDS-T1-GE3
        DISTI # 78-SI2308CDS-T1-GE3        		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SOT-23
        RoHS: Compliant        		74377
        • 1:$0.4200
        • 10:$0.2820
        • 100:$0.1900
        • 500:$0.1530
        • 1000:$0.1150
        • 3000:$0.1050
        • 6000:$0.0990
        • 9000:$0.0930
        SI2308CDS-T1-GE3
        DISTI # 2932884        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W
        RoHS: Compliant        		2232
        • 1000:$0.2080
        • 500:$0.2260
        • 250:$0.2830
        • 100:$0.3600
        • 25:$0.4950
        • 5:$0.6090
        SI2308CDS-T1-GE3
        DISTI # 2932884        		Vishay IntertechnologiesMOSFET, N-CH, 60V, 2.6A, 150DEG C, 1.6W2232
        • 500:£0.1210
        • 250:£0.1500
        • 100:£0.1520
        • 25:£0.2440
        • 5:£0.2540
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        		 Thick Film Resistors - SMD 4.7K OHM 1%
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        Mfr.#: REF3112AQDBZRQ1

        OMO.#: OMO-REF3112AQDBZRQ1-TEXAS-INSTRUMENTS

        		 IC VREF SERIES 1.25V SOT23-3
        TPSB107K006R0250

        Mfr.#: TPSB107K006R0250

        OMO.#: OMO-TPSB107K006R0250-AVX

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        Mfr.#: STM32F373RCT6

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        TPS63002DRCR

        Mfr.#: TPS63002DRCR

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        可用性
        库存:
        74
        订购:
        2057
        输入数量:
        SI2308CDS-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$0.41
        US$0.41
        10
        US$0.28
        US$2.81
        100
        US$0.19
        US$18.90
        500
        US$0.15
        US$76.00
        1000
        US$0.11
        US$114.00
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