SIHFIB16N50K-E3

Mfr. #:: SIHFIB16N50K-E3
制造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SIHFIB16N50K-E3 数据表
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更多信息:: SIHFIB16N50K-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 集成电路芯片

系列: E

打包: 管子

单位重量: 0.211644 oz

包装盒: TO-220-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

钯功耗: 45 W

Id 连续漏极电流: 6.7 A

Vds-漏-源-击穿电压: 500 V

Rds-On-Drain-Source-Resistance: 350 mOhms

晶体管极性: N通道

Qg-门电荷: 89 nC

Tags: SIHFIB1, SIHFIB, SIHFI, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHFIB16N50K-E3 描述

***et: Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.7A; Drain Source Voltage, Vds:500V; On Resistance, Rds(on):0.29ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes

SIHFIB16N50K-E3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型号	制造商	描述	库存	价格
SIHFIB16N50K-E3 DISTI # SIHFIB16N50K-E3	Vishay Intertechnologies	Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: SIHFIB16N50K-E3) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$2.9900 2000:$2.8900 4000:$2.7900 6000:$2.6900 10000:$2.5900
SIHFIB16N50K-E3 DISTI # 781-SIHFIB16N50K-E3	Vishay Intertechnologies	MOSFET 500V 6.7A 45W 350mohm @ 10V RoHS: Compliant	0	1000:$2.9300

图片	型号	描述
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3	MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB16N50K-E3 OMO.#: OMO-SIHFIB16N50K-E3-317	RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
	Mfr.#: SIHFIB11N50A OMO.#: OMO-SIHFIB11N50A-1190	全新原装
	Mfr.#: SIHFIB11N50A,SIHFIB11N50 OMO.#: OMO-SIHFIB11N50A-SIHFIB11N50-1190	全新原装
	Mfr.#: SIHFIB11N50A-E3 OMO.#: OMO-SIHFIB11N50A-E3-1190	全新原装

SIHFIB16N50K-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes