TGF2957

TGF2957
Mfr. #:
TGF2957
制造商:
Qorvo
描述:
RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
生命周期:
制造商新产品。
数据表:
TGF2957 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2957 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓碳化硅
获得:
18.2 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
32 V
Id - 连续漏极电流:
820 mA
输出功率:
41.6 dBm
最大漏栅电压:
100 V
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
Pd - 功耗:
17 W
安装方式:
贴片/贴片
包装/案例:
打包:
凝胶包
配置:
单身的
工作频率:
15 GHz
工作温度范围:
- 65 C to + 150 C
品牌:
科沃
产品类别:
射频 JFET 晶体管
出厂包装数量:
50
子类别:
晶体管
第 # 部分别名:
1112257
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 70 W, 19.2 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
1112250
DISTI # TGF2957
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$9.5500
图片 型号 描述
TGF150D

Mfr.#: TGF150D

OMO.#: OMO-TGF150D

Thermal Interface Products 1.5W/M-K 200*300*1 TGF150D Light Grey
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
TGF2021-04-SG

Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2021-12-XCC-2

Mfr.#: TGF2021-12-XCC-2

OMO.#: OMO-TGF2021-12-XCC-2-1190

全新原装
TGF2023-2-0150PCS

Mfr.#: TGF2023-2-0150PCS

OMO.#: OMO-TGF2023-2-0150PCS-1190

全新原装
TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

全新原装
TGF4250-SCC

Mfr.#: TGF4250-SCC

OMO.#: OMO-TGF4250-SCC-1152

RF JFET Transistors DC-10.5GHz 2.5 Watt HFET
TGF25-07870787-020

Mfr.#: TGF25-07870787-020

OMO.#: OMO-TGF25-07870787-020-LEADER-TECH

THERMAL GAP FILLER, 200X200X0.5MM
TGF60-07870787-039

Mfr.#: TGF60-07870787-039

OMO.#: OMO-TGF60-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, GREY
TGF-R-5309-10

Mfr.#: TGF-R-5309-10

OMO.#: OMO-TGF-R-5309-10-1190

D8 - CONNECTOR, ACCESS
可用性
库存:
50
订购:
2033
输入数量:
TGF2957的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
50
US$82.32
US$4 116.00
100
US$72.74
US$7 274.00
从...开始
Top