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BSR316PH6327XTSA1

BSR316PH6327XTSA1
Mfr. #:
BSR316PH6327XTSA1
制造商:
Infineon Technologies
描述:
MOSFET SMALL SIGNAL+P-CH
生命周期:
制造商新产品。
数据表:
BSR316PH6327XTSA1 数据表
交货:
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支付:
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ECAD Model:
更多信息:
BSR316PH6327XTSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PG-SC-59-3
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
100 V
Id - 连续漏极电流：
360 mA
Rds On - 漏源电阻：
1.8 Ohms
Vgs th - 栅源阈值电压：
2 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
5.3 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
500 mW (1/2 W)
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
1.1 mm
长度：
3 mm
产品：
MOSFET
晶体管类型：
1 P-Channel
类型：
小信号晶体管
宽度：
1.6 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
300 mS
秋季时间：
26 ns
产品类别：
MOSFET
上升时间：
6 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
71 ns
典型的开启延迟时间：
5 ns
第 # 部分别名：
BSR316P H6327 SP001101034
单位重量：
0.002469 oz
Tags
BSR316, BSR31, BSR3, BSR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 100 V 360 mA 1.8 Ohm 7 nC SIPMOS® Power Mosfet - PG-SC-59
***ark
MOSFET, P-CH, 100V, 0.36A, 150DEG C/0.5W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:360mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***ure Electronics
Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
***et
Transistor MOSFET Array Dual N-CH 60V 0.37A 6-Pin SC-70 T/R
***ark
Mosfet, Dual N Channel, 60V, 0.37A, Sot-363-6, Full Reel; Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:370Ma; No. Of Pins:6Pins Rohs Compliant: No
***(Formerly Allied Electronics)
SI1029X-T1-GE3 Dual N/P-channel MOSFET Transistor; 0.19 A; 0.3 A; 60V; 6-Pin SC-89
*** Source Electronics
Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R / MOSFET N/P-CH 60V SC89-6
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, NP CH, 60V, SC-89; Transistor Polarity:N and P Complement; Continuous Drain Current Id:305mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:6
***(Formerly Allied Electronics)
SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89
***ure Electronics
Single N-Channel 60 V 3 O 250 mW Surface Mount Power Mosfet - SC-89-6
*** Source Electronics
MOSFET 2N-CH 60V 0.305A SC89-6 / Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R
***ment14 APAC
N CHANNEL, MOSFET, 60V, 500mA, SC-89; Tr; N CHANNEL, MOSFET, 60V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:1.4V; Threshold Voltage Vgs:20V
***emi
Small Signal MOSFET 20V 300mA 2.2 Ohm Single P-Channel SC-70
***ical
Trans MOSFET P-CH 20V 0.3A 3-Pin SC-70 T/R
***ser
MOSFETs- Power and Small Signal 20V 300mA P-Channel
***r Electronics
Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***nell
MOSFET, P, 20V, SOT-323; Transistor Polarity: P Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 300mA; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: -10V
***emi
Logic Level PowerTrench® MOSFET, P-Channel, -30 V, -1.6 A, 190 mΩ
***rchild Semiconductor
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
P CHANNEL MOSFET, -30V, 1.6A, SC-70; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.6A; Device Marking:.36; Package / Case:SC70; Power Dissipation Pd:750mW; Pulse Current Idm:6A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
*** Source Electronics
Trans MOSFET P-CH 30V 0.7A 3-Pin SC-59 T/R / MOSFET P-CH 30V 700MA SC59-3
***ure Electronics
P-Channel 20 V 250 mOhm Enhancement Mode Field Effect Transistor -SC59
***ser
Transistor - FET P-Channel 30V 700mA
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
BSR316P Small Signal Transistor
Infineon BSR316P Small Signal Transistor is a 20V to 250V P-channel power MOSFET. This transistor consistently meets the quality and performance requirements of power system design. The BSR316P is lead-free, AEC Q101 qualified, and features maximum 1.8Ω RDS(on). These transistors are avalanche-rated and halogen-free. They include enhancement mode and footprint compatibility to SOT23. Applications include automotive, consumer, DC-DC, motor control, notebook, onboard charger, and eMobility.
型号 制造商 描述 库存 价格
BSR316PH6327XTSA1
DISTI # 33925021		Infineon Technologies AGTrans MOSFET P-CH 100V 0.36A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		15000
  • 3000:$0.0947
BSR316PH6327XTSA1
DISTI # BSR316PH6327XTSA1TR-ND		Infineon Technologies AGMOSFET P-CH 100V 360MA SC-59-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.1361
  • 15000:$0.1436
  • 6000:$0.1542
  • 3000:$0.1649
BSR316PH6327XTSA1
DISTI # BSR316PH6327XTSA1CT-ND		Infineon Technologies AGMOSFET P-CH 100V 360MA SC-59-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1862
  • 500:$0.2410
  • 100:$0.3068
  • 10:$0.4110
  • 1:$0.4800
BSR316PH6327XTSA1
DISTI # BSR316PH6327XTSA1DKR-ND		Infineon Technologies AGMOSFET P-CH 100V 360MA SC-59-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1862
  • 500:$0.2410
  • 100:$0.3068
  • 10:$0.4110
  • 1:$0.4800
BSR316PH6327XTSA1
DISTI # V72:2272_09156834		Infineon Technologies AGTrans MOSFET P-CH 100V 0.36A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		0
    BSR316PH6327XTSA1
    DISTI # BSR316PH6327XTSA1    		Infineon Technologies AGTrans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R - Tape and Reel (Alt: BSR316PH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 45000
    • 30000:$0.1019
    • 18000:$0.1039
    • 12000:$0.1079
    • 6000:$0.1119
    • 3000:$0.1159
    BSR316PH6327XTSA1
    DISTI # SP001101034    		Infineon Technologies AGTrans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R (Alt: SP001101034)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 12000
    • 30000:€0.1039
    • 18000:€0.1119
    • 12000:€0.1249
    • 6000:€0.1399
    • 3000:€0.1649
    BSR316PH6327XTSA1
    DISTI # BSR316P H6327    		Infineon Technologies AGTrans MOSFET P-CH 100V 0.36A 3-Pin SC-59 T/R (Alt: BSR316P H6327)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      BSR316PH6327XTSA1
      DISTI # 80Y2237      		Infineon Technologies AGMOSFET, P-CH, -100V, -0.36A, SC-59-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-360mA,Drain Source Voltage Vds:-100V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes5056
      • 1000:$0.1750
      • 500:$0.1920
      • 250:$0.2080
      • 100:$0.2250
      • 50:$0.2730
      • 25:$0.3220
      • 10:$0.3700
      • 1:$0.4440
      BSR316PH6327XTSA1
      DISTI # 726-BSR316PH6327XTSA      		Infineon Technologies AGMOSFET SMALL SIGNAL+P-CH
      RoHS: Compliant      		8137
      • 1:$0.4400
      • 10:$0.3660
      • 100:$0.2230
      • 1000:$0.1730
      • 3000:$0.1470
      • 9000:$0.1370
      • 24000:$0.1300
      • 45000:$0.1270
      BSR316PH6327XTSA1
      DISTI # BSR316PH6327XTSA1      		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-100V,-0.29A,0.5W,SC592875
      • 3000:$0.1261
      • 500:$0.1351
      • 100:$0.1509
      • 25:$0.1869
      • 3:$0.2185
      BSR316PH6327XTSA1
      DISTI # 2530221      		Infineon Technologies AGMOSFET, P-CH, -100V, -0.36A, SC-59-3
      RoHS: Compliant      		1040
      • 3000:$0.2020
      • 500:$0.2140
      • 250:$0.2470
      • 100:$0.2920
      • 25:$0.3580
      • 1:$0.4110
      BSR316PH6327XTSA1
      DISTI # 2530221      		Infineon Technologies AGMOSFET, P-CH, -100V, -0.36A, SC-59-316263
      • 500:£0.1340
      • 250:£0.1530
      • 100:£0.1730
      • 25:£0.3080
      • 5:£0.3240
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      可用性
      库存:
      28
      订购:
      2011
      输入数量:
      BSR316PH6327XTSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.44
      US$0.44
      10
      US$0.37
      US$3.66
      100
      US$0.22
      US$22.30
      1000
      US$0.17
      US$173.00
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