SI2309DS

Mfr. #:: SI2309DS
制造商:: Rectron
描述:: MOSFET Plastic-Encapsulated MOSFET P-CH-60V
生命周期:: 制造商新产品。
数据表:: SI2309DS 数据表
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ECAD Model:

产品属性
属性值

制造商：: 矩形

产品分类：: MOSFET

RoHS：: Y

技术：: 硅

打包：: 卷轴

品牌：: 矩形

产品类别：: MOSFET

出厂包装数量：: 3000

子类别：: MOSFET

Tags: SI2309D, SI2309, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2309DS 描述

***ark: MOSFET, P, SOT-23; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; ;RoHS Compliant: Yes

***nell: MOSFET, P, SOT-23; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; Device Marking:SI2309DS; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm

Market price

型号	制造商	描述	库存	价格
SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI2309DS-T1-GE3 DISTI # 15R4907	Vishay Intertechnologies	P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes	0
SI2309DS-T1-GE3 DISTI # 84R8025	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes	0
SI2309DS-T1-E3 DISTI # 70026067	Vishay Siliconix	MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W RoHS: Compliant	0	1:$0.6200 100:$0.5900 250:$0.5600 500:$0.5300 1000:$0.5100
SI2309DS DISTI # 583-SI2309DS	Rectron Semiconductor	MOSFET Plastic-Encapsulated MOSFET P-CH-60V RoHS: Compliant	0	3000:$0.1560 6000:$0.1560 9000:$0.1170 12000:$0.1080
SI2309DS-T1-E3 DISTI # 781-SI2309DS-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant	0
SI2309DS-T1 DISTI # 781-SI2309DS	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Not compliant	0
SI2309DS-T1-GE3 DISTI # 781-SI2309DS-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant	0
SI2309DS-T1	Vishay Intertechnologies	* FREE SHIPPING ORDERS OVER $100 * SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236	1272	1144:$0.7700 660:$0.8750 1:$2.8000
SI2309DS-T1	Vishay Intertechnologies	* FREE SHIPPING ORDERS OVER $100 * SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236	1581	798:$1.1400 428:$1.2540 1:$3.0400
SI2309DST1	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Not Compliant	2505

图片	型号	描述
	Mfr.#: SI2301-TP OMO.#: OMO-SI2301-TP-MICRO-COMMERCIAL-COMPONENTS	全新原装
	Mfr.#: SI2301. OMO.#: OMO-SI2301--1190	全新原装
	Mfr.#: SI2302-FMS OMO.#: OMO-SI2302-FMS-1190	全新原装
	Mfr.#: SI2302I OMO.#: OMO-SI2302I-1190	全新原装
	Mfr.#: SI2302S OMO.#: OMO-SI2302S-1190	全新原装
	Mfr.#: SI2303CDS-TI-GE3 OMO.#: OMO-SI2303CDS-TI-GE3-1190	全新原装
	Mfr.#: SI2305DS OMO.#: OMO-SI2305DS-1190	全新原装
	Mfr.#: SI2306BDS-T1-E3 L6Y OMO.#: OMO-SI2306BDS-T1-E3-L6Y-1190	全新原装
	Mfr.#: SI2314 AE9T OMO.#: OMO-SI2314-AE9T-1190	全新原装
	Mfr.#: SI2367DS-T1-GE3 OMO.#: OMO-SI2367DS-T1-GE3-VISHAY	MOSFET P-CH 20V 3.8A SOT-23

SI2309DS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes