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MR45V200BRAZAARL

MR45V200BRAZAARL
Mfr. #:
MR45V200BRAZAARL
制造商:
Rohm Semiconductor
描述:
F-RAM FeRAM/2M 256K x 8 DIP8
生命周期:
制造商新产品。
数据表:
MR45V200BRAZAARL 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MR45V200BRAZAARL 更多信息
产品属性
属性值
制造商：
罗姆半导体
产品分类：
内存
RoHS：
Y
安装方式：
通孔
包装/案例：
DIP-8
内存大小：
2 Mbit
接口类型：
SPI
组织：
256 k x 8
电源电压 - 最小值：
2.7 V
电源电压 - 最大值：
3.6 V
最低工作温度：
- 40 C
最高工作温度：
+ 85 C
打包：
卷轴
品牌：
罗姆半导体
工作电源电压：
2.7 V to 3.6 V
产品类别：
随机存取存储器
出厂包装数量：
1400
子类别：
内存和数据存储
Tags
MR45V2, MR45V, MR45, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
2Mbit 256k x 8-bit FeRAM
ROHM Semiconductor 2Mbit 256k x 8-bit FeRAM is a non-volatile Ferroelectric Random Access Memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The 2Mbit FeRAM is accessed using a serial peripheral interface. This FeRAM device eliminates battery backup required to hold data as cells are nonvolatile. The 2Mbit FeRAM memories offer no mechanisms of erasing and programming memory cells and blocks as those are used for various EEPROMs. This FeRAM device is guaranteed for the write/read tolerance of 1012 cycles/bit and the rewrite count can be extended significantly that is used in various applications.
MR4xVx FeRAM Series
ROHM Semiconductor MR4xVx FeRAM Series are Ferro-electric Random Access Memory from 32kbit to 2Mbit configuration developed by ferroelectrics process and CMOS process technology. These MR4xVx FeRAM series offer no backup by battery, high-speed random read/write, rewrite up to 1 trillion times, and low power consumption for various applications. The FeRAM ensures high quality and uninterrupted supply within ROHM group. Typical applications include car navigation, car audio, car electronics, PLC, industrial printers, and TV for business.
型号 制造商 描述 库存 价格
MR45V200BRAZAARL
DISTI # MR45V200BRAZAARL-ND		ROHM SemiconductorFERAM / 2MBIT (256KB X 8) / SPI
RoHS: Compliant
Min Qty: 1
Container: Tube		1398In Stock
  • 1400:$5.2447
  • 500:$5.4351
  • 250:$5.7148
  • 100:$5.8935
  • 50:$6.5696
  • 25:$6.5928
  • 10:$6.7330
  • 1:$7.3200
MR45V200BRAZAARL
DISTI # 755-MR45V200BRAZAARL		ROHM SemiconductorF-RAM FeRAM/2M 256K x 8 DIP8
RoHS: Compliant		2783
  • 1:$8.8100
  • 10:$7.9600
  • 25:$7.5900
  • 100:$6.5900
  • 250:$6.3000
  • 500:$5.7400
  • 1400:$5.0000
MR45V256AMAZAAT-LROHM SemiconductorF-RAM 256K,SPI,3.3V FeRAM 15MHzAmericas -
    MR45V200BRAZAARLROHM SemiconductorF-RAM FeRAM/2M 256K x 8 DIP8Americas -
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      可用性
      库存:
      Available
      订购:
      1985
      输入数量:
      MR45V200BRAZAARL的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$8.81
      US$8.81
      10
      US$7.96
      US$79.60
      25
      US$7.59
      US$189.75
      100
      US$6.59
      US$659.00
      250
      US$6.30
      US$1 575.00
      500
      US$5.74
      US$2 870.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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