GS8161E36DGT-150I

GS8161E36DGT-150I
Mfr. #:
GS8161E36DGT-150I
制造商:
GSI Technology
描述:
SRAM 2.5 or 3.3V 512K x 36 18M
生命周期:
制造商新产品。
数据表:
GS8161E36DGT-150I 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS8161E36DGT-150I 更多信息
产品属性
属性值
制造商:
GSI技术
产品分类:
静态随机存取存储器
RoHS:
Y
内存大小:
18 Mbit
组织:
512 k x 36
访问时间:
7.5 ns
最大时钟频率:
150 MHz
接口类型:
平行线
电源电压 - 最大值:
3.6 V
电源电压 - 最小值:
2.3 V
电源电流 - 最大值:
200 mA, 210 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
安装方式:
贴片/贴片
包装/案例:
TQFP-100
打包:
托盘
内存类型:
特别提款权
系列:
GS8161E36DGT
类型:
DCD 管道/流通
品牌:
GSI技术
湿气敏感:
是的
产品类别:
静态随机存取存储器
出厂包装数量:
36
子类别:
内存和数据存储
商品名:
同步突发
Tags
GS8161E36DGT-1, GS8161E36DGT, GS8161E36DG, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 7.5ns/3.8ns 100-Pin TQFP
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP
***ure Electronics
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 166MHz 3.5ns
***egrated Device Technology
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
***ure Electronics
AS8C161831 Series 18 Mb (512 K x 36) 2.5 V 6 ns Synchronous RAM - TQFP-100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP
***metry Electronics
SDRAM 18MB 166MHz 2.5V 512K x 36 100 TQFP
***-Wing Technology
Surface Mount Tray SRAM - Synchronous SDR PIPELINED ARCHITECTURE ic memory 166MHz 3.5ns 1.6mm 18Mb
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***egrated Device Technology
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
IC DRAM 512M PARALLEL 54TFBGA
*** Electronic Components
SRAM 2.5V CORE ZBT X18 18M
***p One Stop Global
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3.1ns 100-Pin TQFP
***-Wing Technology
3A991.B.2.A Surface Mount Tray 512KX36 ic memory 200MHz 3.1ns 20mm 475mA
***SIT Distribution GmbH
Cache SRAM, 512KX36, 3.1ns, CMOS, PQFP100
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
18Mb,pipeline,sync,512K X 36,200Mhz,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LPS51236A-200TQLI
***hine Compare
18Mb, Flow-Through, Sync, 512K x 36, 7.5ns, 3.3V or 2.5V I/O, 100 Pin TQFP, Leadfree
***ical
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 7.5ns 100-Pin TQFP
***-Wing Technology
3A991.B.2.A Surface Mount Tray 512KX36 ic memory 117MHz 7.5ns 20mm 250mA
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***p One Stop
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3.1ns 100-Pin TQFP
***-Wing Technology
3A991 Surface Mount Tray 512KX36 ic memory 200MHz 3.1ns 20mm 475mA
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
Ic, Sram, 18Mbit, 3.1Ns, Tqfp-100; Sram Type:Pipelined Sram; Memory Configuration:512K X 36Bit; Ic Case/Package:Tqfp; No. Of Pins:100Pins; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Supply Voltage Nom:3.3V; Msl:- Rohs Compliant: Yes |Integrated Silicon Solution (Issi) IS61NLP51236-200TQLI
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
图片 型号 描述
GS8161E36DD-150

Mfr.#: GS8161E36DD-150

OMO.#: OMO-GS8161E36DD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150

Mfr.#: GS8161E36DGD-150

OMO.#: OMO-GS8161E36DGD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGT-333IV

Mfr.#: GS8161E36DGT-333IV

OMO.#: OMO-GS8161E36DGT-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-150IV

Mfr.#: GS8161E32DGT-150IV

OMO.#: OMO-GS8161E32DGT-150IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGT-333V

Mfr.#: GS8161E36DGT-333V

OMO.#: OMO-GS8161E36DGT-333V

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGD-333V

Mfr.#: GS8161E32DGD-333V

OMO.#: OMO-GS8161E32DGD-333V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-375

Mfr.#: GS8161E36DD-375

OMO.#: OMO-GS8161E36DD-375

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DD-375

Mfr.#: GS8161E32DD-375

OMO.#: OMO-GS8161E32DD-375

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DD-333I

Mfr.#: GS8161E36DD-333I

OMO.#: OMO-GS8161E36DD-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-375I

Mfr.#: GS8161E36DGD-375I

OMO.#: OMO-GS8161E36DGD-375I

SRAM 2.5 or 3.3V 512K x 36 18M
可用性
库存:
Available
订购:
5000
输入数量:
GS8161E36DGT-150I的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$15.23
US$15.23
25
US$14.14
US$353.50
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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