IPB025N08N3 G

IPB025N08N3 G
Mfr. #:
IPB025N08N3 G
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
生命周期:
制造商新产品。
数据表:
IPB025N08N3 G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPB025N08N3 G 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB025N08N3GATMA1 IPB025N08N3GXT SP000311980
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
300 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
33 ns
上升时间
73 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
80 V
Rds-On-Drain-Source-Resistance
2.5 mOhms
晶体管极性
N通道
典型关断延迟时间
86 ns
典型开启延迟时间
28 ns
通道模式
增强
Tags
IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB025N08N3GATMA1
DISTI # V72:2272_06377516
Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
491
  • 250:$3.3140
  • 100:$3.6820
  • 25:$4.3940
  • 10:$4.6929
  • 1:$5.4740
IPB025N08N3GATMA1
DISTI # V36:1790_06377516
Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    5000In Stock
    • 2000:$2.7677
    • 1000:$2.9134
    IPB025N08N3 G
    DISTI # 32731516
    Infineon Technologies AG01000
    • 200:$4.2840
    • 100:$4.6792
    • 50:$5.7120
    • 10:$5.7758
    • 4:$6.4260
    IPB025N08N3GATMA1
    DISTI # 31005994
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$2.3063
    IPB025N08N3GATMA1
    DISTI # 32864934
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$2.1709
    • 500:$2.2288
    • 250:$2.2899
    • 100:$2.3544
    • 50:$2.4226
    • 25:$2.4949
    • 5:$2.5717
    IPB025N08N3GATMA1
    DISTI # 30331029
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    491
    • 250:$3.5625
    • 100:$3.9581
    • 25:$4.7236
    • 10:$5.0449
    • 3:$5.8845
    IPB025N08N3GATMA1
    DISTI # SP000311980
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 2000
    • 1000:€2.4900
    • 2000:€2.3900
    • 4000:€2.2900
    • 6000:€2.1900
    • 10000:€1.9900
    IPB025N08N3 G
    DISTI # IPB025N08N3 G
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    RoHS: Compliant
    Min Qty: 148
    Container: Bulk
    Americas - 0
    • 149:$2.3900
    • 151:$2.2900
    • 300:$2.1900
    • 745:$2.0900
    • 1490:$2.0900
    IPB025N08N3GXT
    DISTI # IPB025N08N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$2.6900
    • 2000:$2.5900
    • 4000:$2.4900
    • 6000:$2.3900
    • 10000:$2.3900
    IPB025N08N3GATMA1
    DISTI # 60R2648
    Infineon Technologies AGMOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 500:$3.1400
    • 250:$3.5000
    • 100:$3.6900
    • 50:$3.8800
    • 25:$4.0600
    • 10:$4.2500
    • 1:$5.0000
    IPB025N08N3 G
    DISTI # 726-IPB025N08N3G
    Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    1428
    • 1:$5.0000
    • 10:$4.2500
    • 100:$3.6900
    • 250:$3.5000
    • 500:$3.1400
    • 1000:$2.6400
    • 2000:$2.5100
    IPB025N08N3 GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    2700
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    20
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1
    DISTI # 8986898P
    Infineon Technologies AGMOSFET N-CHANNEL 80V 120A TO263-3, RL258
    • 10:£1.9800
    IPB025N08N3GATMA1
    DISTI # 1775525
    Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant
    1424
    • 500:£2.4400
    • 250:£2.7200
    • 100:£2.8700
    • 10:£3.3000
    • 1:£4.3400
    IPB025N08N3GATMA1
    DISTI # 1775525
    Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant
    324
    • 2000:$3.7800
    • 1000:$3.9800
    • 500:$4.7300
    • 250:$5.2700
    • 100:$5.5600
    • 10:$6.4000
    • 1:$7.5400
    IPB025N08N3GATMA1
    DISTI # XSKDRABS0032304
    Infineon Technologies AG 
    RoHS: Compliant
    3000 in Stock0 on Order
    • 3000:$3.4440
    • 1000:$3.6960
    图片 型号 描述
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G

    MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1

    MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N08N3GATMA1

    Mfr.#: IPB025N08N3GATMA1

    OMO.#: OMO-IPB025N08N3GATMA1

    MOSFET MV POWER MOS
    IPB025N08N3 G

    Mfr.#: IPB025N08N3 G

    OMO.#: OMO-IPB025N08N3-G-1190

    Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    IPB025N08N3G

    Mfr.#: IPB025N08N3G

    OMO.#: OMO-IPB025N08N3G-1190

    全新原装
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G-1190

    MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3G

    Mfr.#: IPB025N10N3G

    OMO.#: OMO-IPB025N10N3G-1190

    Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G)
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE8187ATMA1

    Mfr.#: IPB025N10N3GE8187ATMA1

    OMO.#: OMO-IPB025N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE818XT

    Mfr.#: IPB025N10N3GE818XT

    OMO.#: OMO-IPB025N10N3GE818XT-317

    RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6
    可用性
    库存:
    Available
    订购:
    5500
    输入数量:
    IPB025N08N3 G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$3.14
    US$3.14
    10
    US$2.98
    US$29.78
    100
    US$2.82
    US$282.15
    500
    US$2.66
    US$1 332.40
    1000
    US$2.51
    US$2 508.00
    从...开始
    最新产品
    • Mid-Range+ System Basis Chip (SBC)
      Infineon’s Mid-Range+ SBC is an integrated circuit with combined power, communication, safety, and support features all in one device.
    • XDPL8221 Lighting Controller
      Infineon's XDPL8221 highly integrated digital AC/DC controller combines quasi-resonant PFC and quasi-resonant flyback controller with primary side regulation.
    • Compare IPB025N08N3 G
      IPB025N08N3 vs IPB025N08N3G vs IPB025N08N3GATMA1
    • XC9140 Series DC/DC Converter
      Torex's XC9140 series DC/DC converter used for high efficiency consumer applications like keyboards, Bluetooth, and household medical equipment.
    • XC9261 Series Step-Down DC/DC Converters
      Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
    • µHVIC™ IRSxx752L Family
      Infineon Technologies' IRSxx752L are high-side, single-channel gate driver ICs with 600 V (IRS25752L), 200 V (IRS20752L), or 100 V (IRS10752L) blocking and level shifting capability.
    Top