IRLL2703PBF

Mfr. #:: IRLL2703PBF
制造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 3.9A SOT223
生命周期:: 制造商新产品。
数据表:: IRLL2703PBF 数据表
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ECAD Model:

产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 管子

单位重量: 0.006632 oz

安装方式: 贴片/贴片

包装盒: SOT-223-4

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 2.1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 14 ns

上升时间: 24 ns

VGS-栅极-源极-电压: 16 V

Id 连续漏极电流: 5.5 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V to 2.4 V

Rds-On-Drain-Source-Resistance: 70 mOhms

晶体管极性: N通道

典型关断延迟时间: 6.9 ns

典型开启延迟时间: 7.4 ns

Qg-门电荷: 9.3 nC

正向跨导最小值: 5.9 S

通道模式: 增强

Tags: IRLL2703, IRLL27, IRLL2, IRLL, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLL2703PBF 描述

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package

***ied Electronics & Automation: MOSFET, 30V, 5.5A, 45 MOHM, 9.3 NC QG, LOGIC LEVEL, SOT-223

***et: Trans MOSFET N-CH 30V 5.5A 4-Pin(3+Tab) SOT-223

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 30V, 5.5A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:120°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:16A; SMD Marking:LL2703; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V

Market price

型号	制造商	描述	库存	价格
IRLL2703PBF DISTI # IRLL2703PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 3.9A SOT223 RoHS: Compliant Min Qty: 1680 Container: Tube	Limited Supply - Call
IRLL2703PBF DISTI # 942-IRLL2703PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 45mOhms 9.3nC RoHS: Compliant	0
IRLL2703PBF	.		370
IRLL2703PBF	International Rectifier	RoHS: Compliant	Europe - 860
IRLL2703PBF DISTI # 8651221	Infineon Technologies AG	MOSFET, N, 30V, 5.5A, SOT-223 RoHS: Compliant	0	1:$1.0100 10:$0.8350 100:$0.5390 1000:$0.4310 2500:$0.4210

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