TC58NYG0S3HBAI6

TC58NYG0S3HBAI6
Mfr. #:
TC58NYG0S3HBAI6
制造商:
Toshiba Memory
描述:
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
生命周期:
制造商新产品。
数据表:
TC58NYG0S3HBAI6 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TC58NYG0S3HBAI6 更多信息
产品属性
属性值
制造商:
东芝
产品分类:
NAND闪存
RoHS:
Y
安装方式:
贴片/贴片
包装/案例:
VFBGA-67
内存大小:
1 Gbit
接口类型:
平行线
组织:
128 M x 8
数据总线宽度:
8 bit
电源电压 - 最小值:
1.7 V
电源电压 - 最大值:
1.95 V
电源电流 - 最大值:
30 mA
最低工作温度:
- 40 C
最高工作温度:
+ 85 C
打包:
托盘
内存类型:
NAND
品牌:
东芝内存
最大时钟频率:
-
湿气敏感:
是的
产品类别:
NAND闪存
出厂包装数量:
338
子类别:
内存和数据存储
Tags
TC58NYG0, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***akorn
NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 1GBIT 25NS 67VFBGA
***et
1Gbit, generation: 24nm, VCC=1.7 to 1.95V
***S
vpe: 253/tray/bga
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
型号 制造商 描述 库存 价格
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$2.8107
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6
Toshiba America Electronic Components1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 338:$2.1900
  • 676:$2.1900
  • 1352:$2.0900
  • 2028:$2.0900
  • 3380:$2.0900
TC58NYG0S3HBAI6
DISTI # 757-TC58NYG0S3HBAI6
Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
338
  • 1:$3.0600
  • 10:$2.7500
  • 50:$2.7000
  • 100:$2.4100
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
  • 2500:$2.1300
图片 型号 描述
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6

NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58NYG1S3HBAI4_TRAY

Mfr.#: TC58NYG1S3HBAI4_TRAY

OMO.#: OMO-TC58NYG1S3HBAI4-TRAY-1190

全新原装
TC58NYG1S8HBAI6JD2

Mfr.#: TC58NYG1S8HBAI6JD2

OMO.#: OMO-TC58NYG1S8HBAI6JD2-1190

全新原装
TC58NYG2S0FBAI4

Mfr.#: TC58NYG2S0FBAI4

OMO.#: OMO-TC58NYG2S0FBAI4-1190

全新原装
TC58NYG2S3ETAI0B3H

Mfr.#: TC58NYG2S3ETAI0B3H

OMO.#: OMO-TC58NYG2S3ETAI0B3H-1190

全新原装
TC58NYG3S0FBAID

Mfr.#: TC58NYG3S0FBAID

OMO.#: OMO-TC58NYG3S0FBAID-1190

全新原装
TC58NYG1S3HBAI6

Mfr.#: TC58NYG1S3HBAI6

OMO.#: OMO-TC58NYG1S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG2S0HBAI4

Mfr.#: TC58NYG2S0HBAI4

OMO.#: OMO-TC58NYG2S0HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 4Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3HBAI6-ND

Mfr.#: TC58NYG1S3HBAI6-ND

OMO.#: OMO-TC58NYG1S3HBAI6-ND-1190

全新原装
可用性
库存:
338
订购:
2321
输入数量:
TC58NYG0S3HBAI6的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$2.77
US$2.77
10
US$2.49
US$24.90
25
US$2.45
US$61.25
50
US$2.44
US$122.00
100
US$2.18
US$218.00
250
US$2.11
US$527.50
500
US$2.10
US$1 050.00
1000
US$1.96
US$1 960.00
2500
US$1.87
US$4 675.00
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