AOKS30B60D1

Mfr. #:: AOKS30B60D1
制造商:: Alpha & Omega Semiconductor Inc
描述:: IGBT 600V 30A TO247
生命周期:: 制造商新产品。
数据表:: AOKS30B60D1 数据表
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HTML Datasheet:: AOKS30B60D1 Datasheet AOKS30B60D1 Datasheet (P4-P6)AOKS30B60D1 Datasheet (P7)
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Tags: AOKS, AOK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AOKS30B60D1 描述

***ha & Omega Semiconductor SCT: 600V, 30A Alpha IGBT (TM), TO247-3, RoHS

***i-Key: IGBT 600V 30A TO247

***ical: Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ark: Igbt, High Speed, 600V, 60A, To-247A

***nell: IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

***ure Electronics: IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***ark: IGBT, SINGLE, 600V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:1.55V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp

***ark: Transistor, Igbt, 600V, 60A, To-247 Rohs Compliant: Yes

***icroelectronics SCT: Short-circuit rugged IGBT, TO-247, Tube

***Yang: TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk

*** Electronic Components: IGBT Transistors Sgl N-Ch 600V SMPS

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1

Market price

型号	制造商	描述	库存	价格
AOKS30B60D1 DISTI # 785-1758-ND	Alpha & Omega Semiconductor	IGBT 600V 30A TO247 Min Qty: 1 Container: Tube	87In Stock	5000:$1.2908 2500:$1.3069 1000:$1.4038 500:$1.6942 250:$1.9362 100:$2.0621 25:$2.4204 10:$2.5650 1:$2.8600

AOKS30B60D1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes