PHT8N06LT

PHT8N06LT
Mfr. #:
PHT8N06LT
制造商:
PHILIPS
描述:
生命周期:
制造商新产品。
数据表:
PHT8N06LT 数据表
交货:
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ECAD Model:
产品属性
属性值
制造商
飞利浦
产品分类
FET - 单
Tags
PHT8N06LT, PHT8N06L, PHT8N, PHT8, PHT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
MOSFET N-Channel 55V 3.5A Logic SOT223
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:5500mA; On Resistance, Rds(on):80ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
***nell
MOSFET, N, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:7.5A; Resistance, Rds On:0.08ohm; Voltage, Vgs Rds on Measurement:5V; Voltage, Vgs th Typ:1.5V; Case Style:SOT-223; Termination Type:SMD; Current, Id Max:7.5A; Current, Idm Pulse:40A; Power, Pd:1.8W; Power, Ptot:1.8W; Temperature, Current:25°C; Transistors, No. of:1; Voltage, Vds Max:55V
***ment14 APAC
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1.8W; Power Dissipation Pd:8.3W; Power Dissipation Ptot Max:1.8W; Pulse Current Idm:40A; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:13V; Voltage Vgs Rds on Measurement:5V
型号 制造商 描述 库存 价格
PHT8N06LT,135
DISTI # 568-7369-2-ND
NXP SemiconductorsMOSFET N-CH 55V 3.5A SOT223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    PHT8N06LT,135
    DISTI # 568-7369-1-ND
    NXP SemiconductorsMOSFET N-CH 55V 3.5A SOT223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      PHT8N06LT,135
      DISTI # 568-7369-6-ND
      NXP SemiconductorsMOSFET N-CH 55V 3.5A SOT223
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        PHT8N06LT135NXP SemiconductorsPower Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        8000
        • 1000:$0.2900
        • 500:$0.3100
        • 100:$0.3200
        • 25:$0.3400
        • 1:$0.3600
        PHT8N06LT,135
        DISTI # 771-PHT8N06LT135
        NexperiaMOSFET N-CH TRENCH 55V 7.5A
        RoHS: Compliant
        0
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          Mfr.#: PHT8N06LT135

          OMO.#: OMO-PHT8N06LT135-1190

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          可用性
          库存:
          Available
          订购:
          4500
          输入数量:
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