SI5902BDC-T1-E3

Mfr. #:: SI5902BDC-T1-E3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 30V 4.0A 3.12W
生命周期:: 制造商新产品。
数据表:: SI5902BDC-T1-E3 数据表
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产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: 卷带 (TR)

部分别名: SI5902BDC-E3

单位重量: 0.002998 oz

安装方式: 贴片/贴片

包装盒: 8-SMD, Flat Lead

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 1206-8 ChipFET

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 3.12W

晶体管型: 2 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 220pF @ 15V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 65 mOhm @ 3.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

栅极电荷-Qg-Vgs: 7nC @ 10V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 80 ns 12 ns

上升时间: 80 ns 12 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 3.7 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 65 mOhms

晶体管极性: N通道

典型关断延迟时间: 12 ns 10 ns

典型开启延迟时间: 15 ns 4 ns

通道模式: 增强

Tags: SI5902B, SI5902, SI590, SI59, SI5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5902BDC-T1-E3 描述

***ure Electronics: Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin Chip FET T/R

***ark: Transistor; Continuous Drain Current, Id:4000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

Market price

型号	制造商	描述	库存	价格
SI5902BDC-T1-E3 DISTI # V72:2272_09216236	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290 1:$1.0830
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5852
SI5902BDC-T1-E3 DISTI # 30316800	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 12:$0.9290
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5529 6000:$0.5359 12000:$0.5139 18000:$0.4999 30000:$0.4869
SI5902BDC-T1-E3 DISTI # 16P3794	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, 1206,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes	0	1:$1.4300 25:$1.3600 50:$1.2300 100:$1.1100 250:$1.0100 500:$0.8400 1000:$0.7450
SI5902BDC-T1-E3 DISTI # 75M5527	Vishay Intertechnologies	DUAL N-CH 30V (D-S) MOSFET ROHS COMPLIANT: YES	0	1:$0.6540 1000:$0.6270 2000:$0.5700 4000:$0.5130 6000:$0.4940 10000:$0.4830
SI5902BDC-T1-E3 DISTI # 781-SI5902BDC-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	2710	1:$1.3300 10:$1.1000 100:$0.8400 500:$0.7230 1000:$0.5700 3000:$0.5320
SI5902BDCT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 6000
SI5902BDC-T1-E3			1918
SI5902BDC-T1-E3 DISTI # C1S803603325600	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2408	250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290
SI5902BDC-T1-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 4.0A 3.12W
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY	MOSFET 2N-CH 30V 4A 1206-8
	Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI5902BDC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes