SIS427EDN-T1-GE3

SIS427EDN-T1-GE3
Mfr. #:
SIS427EDN-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
生命周期:
制造商新产品。
数据表:
SIS427EDN-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
威世
产品分类
FET - 单
系列
沟槽FETR
打包
Digi-ReelR 替代包装
安装方式
贴片/贴片
商品名
沟槽场效应晶体管
包装盒
PowerPAKR 1212-8
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
PowerPAKR 1212-8
配置
单身的
FET型
MOSFET P 沟道,金属氧化物
最大功率
52W
晶体管型
1 P-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
1930pF @ 15V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
50A (Tc)
Rds-On-Max-Id-Vgs
10.6 mOhm @ 11A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
栅极电荷-Qg-Vgs
66nC @ 10V
钯功耗
52 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
12 ns
上升时间
40 ns
VGS-栅极-源极-电压
25 V
Id 连续漏极电流
- 50 A
Vds-漏-源-击穿电压
- 30 V
VGS-th-Gate-Source-Threshold-Voltage
- 2.5 V
Rds-On-Drain-Source-Resistance
17.7 mOhms
晶体管极性
P-通道
典型关断延迟时间
28 ns
典型开启延迟时间
45 ns
Qg-门电荷
43.5 nC
正向跨导最小值
32 S
Tags
SIS42, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET, P CH, -30V, -50A, POWERPAK1212-8
***ark
N-CHANNEL 30-V (D-S) MOSFET
型号 制造商 描述 库存 价格
SIS427EDN-T1-GE3
DISTI # V72:2272_09216167
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R
RoHS: Compliant
303
  • 250:$0.3636
  • 100:$0.3675
  • 25:$0.4569
  • 10:$0.4622
  • 1:$0.5479
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7895In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7895In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 50A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.2871
SIS427EDN-T1-GE3
DISTI # 27066163
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R
RoHS: Compliant
303
  • 250:$0.3636
  • 100:$0.3675
  • 28:$0.4569
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R (Alt: SIS427EDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$3.4500
  • 6000:$2.3793
  • 9000:$1.7692
  • 15000:$1.4375
  • 30000:$1.3019
  • 75000:$1.2546
  • 150000:$1.2105
SIS427EDN-T1-GE3
DISTI # SIS427EDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS427EDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2619
  • 6000:$0.2539
  • 12000:$0.2429
  • 18000:$0.2369
  • 30000:$0.2299
SIS427EDN-T1-GE3
DISTI # 99W9578
Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 1:$0.3100
  • 5000:$0.3030
  • 10000:$0.2790
  • 20000:$0.2610
  • 30000:$0.2430
  • 50000:$0.2330
SIS427EDN-T1-GE3
DISTI # 78-SIS427EDN-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
RoHS: Compliant
3626
  • 1:$0.7200
  • 10:$0.5750
  • 100:$0.4360
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2610
SIS427EDN-T1-GE3
DISTI # C1S803604990270
Vishay IntertechnologiesMOSFETs303
  • 250:$0.3636
  • 100:$0.3675
  • 25:$0.4569
  • 10:$0.4622
图片 型号 描述
SIS427EDN-T1-GE3

Mfr.#: SIS427EDN-T1-GE3

OMO.#: OMO-SIS427EDN-T1-GE3

MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
SIS427EDN-T1-GE3

Mfr.#: SIS427EDN-T1-GE3

OMO.#: OMO-SIS427EDN-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
SIS427EDN-T1-E3

Mfr.#: SIS427EDN-T1-E3

OMO.#: OMO-SIS427EDN-T1-E3-1190

全新原装
可用性
库存:
Available
订购:
2500
输入数量:
SIS427EDN-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.34
US$0.34
10
US$0.33
US$3.28
100
US$0.31
US$31.04
500
US$0.29
US$146.55
1000
US$0.28
US$275.90
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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