IPB60R250CP

Mfr. #:: IPB60R250CP
制造商:: Rochester Electronics, LLC
描述:: Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
生命周期:: 制造商新产品。
数据表:: IPB60R250CP 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS CP

打包: 卷轴

部分别名: IPB60R250CPATMA1 IPB60R250CPXT SP000358140

单位重量: 0.139332 oz

安装方式: 贴片/贴片

商品名: 酷摩

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 104 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 12 ns

上升时间: 17 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 250 mOhms

晶体管极性: N通道

典型关断延迟时间: 110 ns

典型开启延迟时间: 40 ns

通道模式: 增强

Tags: IPB60R2, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R250CP 描述

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R

***et: Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R

***o-Tech: MOSFET N-Channel 600V 12A CoolMOS3 TO263

***i-Key: MOSFET N-CH 650V 12A TO263-3

***ark: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Market price

型号	制造商	描述	库存	价格
IPB60R250CPATMA1 DISTI # IPB60R250CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 12A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB60R250CP DISTI # IPB60R250CP	Infineon Technologies AG	Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: IPB60R250CP) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 1000
IPB60R250CP DISTI # SP000358140	Infineon Technologies AG	Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: SP000358140) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.9900 2000:€1.4900 4000:€1.3900 6000:€1.3900 10000:€1.2900
IPB60R250CP	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	44770	1000:$1.6800 500:$1.7700 100:$1.8400 25:$1.9200 1:$2.0600
IPB60R250CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	35000	1000:$2.1800 500:$2.2900 100:$2.3900 25:$2.4900 1:$2.6800
IPB60R250CP DISTI # 726-IPB60R250CP	Infineon Technologies AG	MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP RoHS: Compliant	449	1:$3.3200 10:$2.6700 100:$2.4300 250:$2.1900 500:$1.9700 1000:$1.6500 2000:$1.5700 5000:$1.4400
IPB60R250CPATMA1 DISTI # 726-IPB60R250CPATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP RoHS: Compliant	0

相关产品

图片	型号	描述
	Mfr.#: IPB60R099CPATMA1 OMO.#: OMO-IPB60R099CPATMA1	MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
	Mfr.#: IPB60R145CFD7ATMA1 OMO.#: OMO-IPB60R145CFD7ATMA1	MOSFET
	Mfr.#: IPB60R170CFD7ATMA1 OMO.#: OMO-IPB60R170CFD7ATMA1	MOSFET
	Mfr.#: IPB60R600C6ATMA1 OMO.#: OMO-IPB60R600C6ATMA1	MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6
	Mfr.#: IPB60R099CPAATMA1 OMO.#: OMO-IPB60R099CPAATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 31A TO263-3
	Mfr.#: IPB60R160C6ATMA1 OMO.#: OMO-IPB60R160C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 23.8A TO263
	Mfr.#: IPB60R180C7ATMA1 OMO.#: OMO-IPB60R180C7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13A TO263-3
	Mfr.#: IPB60R190C6 (6R190C6) OMO.#: OMO-IPB60R190C6-6R190C6--1190	全新原装
	Mfr.#: IPB60R199CP,6R199P OMO.#: OMO-IPB60R199CP-6R199P-1190	全新原装
	Mfr.#: IPB60R385CPXT OMO.#: OMO-IPB60R385CPXT-1190	全新原装