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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI4160DY-T1-GE3 DISTI # V72:2272_09215537 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1552In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1552In Stock |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 25.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | On Order |
|
| SI4160DY-T1-GE3 DISTI # 25789831 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2915 |
|
| SI4160DY-T1-GE3 DISTI # 31043808 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4160DY-T1-GE3 DISTI # SI4160DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4160DY-T1-GE3 DISTI # 05W6940 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 |
|
| SI4160DY-T1-GE3. DISTI # 15AC0296 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4160DY-T1-GE3 DISTI # 781-SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 0 |
|
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 140 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 1776 | ||
| SI4160DY-T1-GE3 | 118 | |||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | 2922 | ||
| SI4160DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | Americas - 2500 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SI4136M-EVB OMO.#: OMO-SI4136M-EVB |
RF Development Tools WLAN Satellite Radio Synthesizer (RF1/RF2/IF) Evaluation Board MLP |
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Mfr.#: SI4120GM OMO.#: OMO-SI4120GM-1190 |
全新原装 |
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Mfr.#: SI4133G-BM , SMF36AT1G |
全新原装 |
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Mfr.#: SI4136BM OMO.#: OMO-SI4136BM-1190 |
全新原装 |
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Mfr.#: SI4156DY-T1-GE3 OMO.#: OMO-SI4156DY-T1-GE3-VISHAY |
MOSFET N-CH 30V 24A 8-SOIC |
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Mfr.#: SI4168DY-T1-E3 OMO.#: OMO-SI4168DY-T1-E3-1190 |
全新原装 |
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Mfr.#: SI4122-D-GTR |
IC SYNTHESIZER RF2/IF 24TSSOP |
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Mfr.#: SI4103DY-T1-GE3 OMO.#: OMO-SI4103DY-T1-GE3-VISHAY |
MOSFET P-CHAN 30V SO-8 |
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Mfr.#: SI4123M-EVB OMO.#: OMO-SI4123M-EVB-SILICON-LABS |
BOARD EVALUATION FOR SI4123 |
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Mfr.#: SI4126M-EVB OMO.#: OMO-SI4126M-EVB-SILICON-LABS |
BOARD EVALUATION FOR SI4126 |