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BSP613PH6327XTSA1

BSP613PH6327XTSA1
Mfr. #:
BSP613PH6327XTSA1
制造商:
Infineon Technologies
描述:
MOSFET P-Ch -60V -2.9A SOT-223-3
生命周期:
制造商新产品。
数据表:
BSP613PH6327XTSA1 数据表
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HTML Datasheet:
BSP613PH6327XTSA1 DatasheetBSP613PH6327XTSA1 Datasheet (P4-P6)BSP613PH6327XTSA1 Datasheet (P7-P9)
ECAD Model:
更多信息:
BSP613PH6327XTSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
PG-SOT-223-4
通道数：
1 Channel
晶体管极性：
P-通道
Vds - 漏源击穿电压：
60 V
Id - 连续漏极电流：
2.9 A
Rds On - 漏源电阻：
130 mOhms
Vgs th - 栅源阈值电压：
2.1 V
Vgs - 栅源电压：
10 V
Qg - 门电荷：
22 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
1.8 W
配置：
单身的
频道模式：
增强
打包：
卷轴
高度：
1.6 mm
长度：
6.5 mm
系列：
BSP613
晶体管类型：
1 P-Channel
宽度：
3.5 mm
品牌：
英飞凌科技
正向跨导 - 最小值：
2.7 S
秋季时间：
7 ns
产品类别：
MOSFET
上升时间：
9 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
26 ns
典型的开启延迟时间：
6.7 ns
第 # 部分别名：
BSP613P H6327 SP001058788
单位重量：
0.003951 oz
Tags
BSP613PH, BSP613P, BSP613, BSP61, BSP6, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
BSP613PH6327XTSA1 P-Channel MOSFET, 2.9 A, 60 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon
*** Stop Electro
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
***p One Stop
Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223
***nell
MOSFET, P-CH, -60V, -2.9A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.9 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 6.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***p One Stop Global
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
***ark
MOSFET, N-CH, 60V, 2.9A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
*** Source Electronics
MOSFET N-CH 100V 3.2A SOT-223-4 / Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
FDT86106LZ Series 100 V 3.2 A 108 mOhm N-Ch PowerTrench Mosfet - SOT-223-3
***emi
N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ
***nell
MOSFET, N CH, 100V, 3.2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.2V
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
***emi
N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ
***ure Electronics
N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223
***essParts.Net
FAIRCHILD FDT3612 / MOSFET N-CH 100V 3.7A SOT-223 D/C D1025AC
***ical
Trans MOSFET N-CH 100V 3.7A 4-Pin (3+Tab) SOT-223 T/R
***ment14 APAC
MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
*** Source Electronics
Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 3.3A SOT223
***ure Electronics
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
***emi
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
***enic
100V 3.3A 2.2W 100m´Î@10V3.3A 2.5V@250Ã×A N Channel SOT-223-4 MOSFETs ROHS
***nell
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
***ure Electronics
Single N-Channel 55 V 0.045 Ohm 23 nC HEXFET® Power Mosfet - SOT-223
*** Source Electronics
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) | MOSFET N-CH 55V 3.7A SOT223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***(Formerly Allied Electronics)
MOSFET, 55V, 3.7A, 45 mOhm, 23 nC Qg, SOT-223
***p One Stop Global
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ure Electronics
P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - SOT-223-3
***p One Stop
Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin(3+Tab) SOT-223 T/R
***icontronic
Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
型号 制造商 描述 库存 价格
BSP613PH6327XTSA1
DISTI # V36:1790_06391746		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		0
  • 1000000:$0.4382
  • 500000:$0.4387
  • 100000:$0.4864
  • 10000:$0.5770
  • 1000:$0.5925
BSP613PH6327XTSA1
DISTI # V72:2272_06391746		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		0
    BSP613PH6327XTSA1
    DISTI # BSP613PH6327XTSA1CT-ND    		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2621In Stock
    • 500:$0.6442
    • 100:$0.7798
    • 10:$1.0000
    • 1:$1.1200
    BSP613PH6327XTSA1
    DISTI # BSP613PH6327XTSA1DKR-ND    		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2621In Stock
    • 500:$0.6442
    • 100:$0.7798
    • 10:$1.0000
    • 1:$1.1200
    BSP613PH6327XTSA1
    DISTI # BSP613PH6327XTSA1TR-ND    		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		2000In Stock
    • 10000:$0.4213
    • 5000:$0.4378
    • 2000:$0.4608
    • 1000:$0.4938
    BSP613PH6327XTSA1
    DISTI # BSP613PH6327XTSA1    		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP613PH6327XTSA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$0.3179
    • 6000:$0.3239
    • 4000:$0.3349
    • 2000:$0.3479
    • 1000:$0.3609
    BSP613PH6327XTSA1
    DISTI # BSP613PH6327XTSA1    		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Bulk (Alt: BSP613PH6327XTSA1)
    RoHS: Compliant
    Min Qty: 926
    Container: Bulk    		Americas - 0
      BSP613PH6327XTSA1
      DISTI # BSP613P H6327      		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R (Alt: BSP613P H6327)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Asia - 0
      • 50000:$0.4063
      • 25000:$0.4115
      • 10000:$0.4169
      • 5000:$0.4224
      • 3000:$0.4338
      • 2000:$0.4458
      • 1000:$0.4586
      BSP613PH6327XTSA1
      DISTI # SP001058788      		Infineon Technologies AGTrans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R (Alt: SP001058788)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 0
      • 10000:€0.3489
      • 6000:€0.3759
      • 4000:€0.4079
      • 2000:€0.4449
      • 1000:€0.5439
      BSP613PH6327XTSA1
      DISTI # 29X1531      		Infineon Technologies AGMOSFET Transistor, P Channel, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V RoHS Compliant: Yes18
      • 500:$0.6020
      • 100:$0.6820
      • 10:$0.8870
      • 1:$1.0300
      BSP613P H6327
      DISTI # 726-BSP613PH6327      		Infineon Technologies AGMOSFET P-Ch -60V -2.9A SOT-223-3
      RoHS: Compliant      		0
      • 1:$1.0200
      • 10:$0.8780
      • 100:$0.6750
      • 500:$0.5960
      • 1000:$0.4710
      BSP613PH6327XTSA1
      DISTI # 726-BSP613PH6327XTSA      		Infineon Technologies AGMOSFET P-Ch -60V -2.9A SOT-223-3
      RoHS: Compliant      		0
      • 1:$1.0200
      • 10:$0.8780
      • 100:$0.6750
      • 500:$0.5960
      • 1000:$0.4710
      BSP613PH6327XTSA1
      DISTI # 8922236P      		Infineon Technologies AGMOSFET P-CHANNEL 60V 2.9A SOT223-4, RL2500
      • 2500:£0.4150
      • 1000:£0.4240
      • 500:£0.4320
      • 100:£0.4380
      BSP613PH6327XTSA1
      DISTI # 8922236      		Infineon Technologies AGMOSFET P-CHANNEL 60V 2.9A SOT223-4, PK1240
      • 2500:£0.4150
      • 1000:£0.4240
      • 500:£0.4320
      • 100:£0.4380
      • 20:£0.5020
      BSP613PH6327XTSA1
      DISTI # BSP613PH6327XTSA1      		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-60V,-2.9A,1.8W,PG-SOT223995
      • 100:$0.4741
      • 10:$0.5451
      • 3:$0.6791
      • 1:$0.7906
      BSP613PH6327XTSA1
      DISTI # 2377261      		Infineon Technologies AGMOSFET, P-CH, -60V, -2.9A, SOT-223-4
      RoHS: Compliant      		1013
      • 500:$0.9160
      • 100:$1.0500
      • 10:$1.3500
      • 1:$1.5800
      BSP613PH6327XTSA1
      DISTI # 2377261      		Infineon Technologies AGMOSFET, P-CH, -60V, -2.9A, SOT-223-41984
      • 500:£0.4630
      • 250:£0.4940
      • 100:£0.5250
      • 10:£0.7410
      • 1:£0.9060
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      可用性
      库存:
      Available
      订购:
      1992
      输入数量:
      BSP613PH6327XTSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.02
      US$1.02
      10
      US$0.88
      US$8.78
      100
      US$0.68
      US$67.50
      500
      US$0.60
      US$298.00
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