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NGTB03N60R2DT4G

NGTB03N60R2DT4G
Mfr. #:
NGTB03N60R2DT4G
制造商:
ON Semiconductor
描述:
IGBT Transistors RC2 IGBT 3A 600V DPAK
生命周期:
制造商新产品。
数据表:
NGTB03N60R2DT4G 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
DPAK-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.7 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
9 A
Pd - 功耗：
49 W
最高工作温度：
+ 175 C
打包：
卷轴
连续集电极电流 Ic 最大值：
4.5 A
品牌：
安森美半导体
栅极-发射极漏电流：
+/- 100 nA
产品类别：
IGBT晶体管
出厂包装数量：
2500
子类别：
IGBT
单位重量：
0.012346 oz
Tags
NGTB0, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R
***el Electronic
ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 9A, TO-252-3
***nell
IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R
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ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 20A, TO-252-3
***nell
IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R
*** Electronics
ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins
*** Stop Electro
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 16A, TO-252-3
***nell
IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
N-channel 600 V, 7 A very fast IGBT
***roFlash
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***icroelectronics SCT
Short-circuit rugged IGBT, DPAK, Tape and Reel
***ment14 APAC
IGBT, SINGLE, 600V, 15A, TO-252-3
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***ponent Stockers USA
15 A 600 V N-CHANNEL IGBT TO-252AA
***nell
IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
10 A, 600 V short-circuit rugged IGBT
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
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***ark
Ptd High Voltage Rohs Compliant: Yes
***nell
IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper
***ical
Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
***ser
Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
***nell
IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
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***ure Electronics
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***r Electronics
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*** Electronic Components
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***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***th Star Micro
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Product Highlights: High Current Capability Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input Impedance
型号 制造商 描述 库存 价格
NGTB03N60R2DT4G
DISTI # V72:2272_07323134		ON SemiconductorTrans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2447
  • 1000:$0.3481
  • 500:$0.3629
  • 250:$0.4033
  • 100:$0.4481
  • 25:$0.6394
  • 10:$0.7815
  • 1:$0.9454
NGTB03N60R2DT4G
DISTI # V36:1790_07323134		ON SemiconductorTrans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    NGTB03N60R2DT4G
    DISTI # NGTB03N60R2DT4GOSCT-ND    		ON SemiconductorIGBT 9A 600V DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		801In Stock
    • 500:$0.5003
    • 100:$0.6329
    • 10:$0.8260
    • 1:$0.9400
    NGTB03N60R2DT4G
    DISTI # NGTB03N60R2DT4GOSDKR-ND    		ON SemiconductorIGBT 9A 600V DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      NGTB03N60R2DT4G
      DISTI # NGTB03N60R2DT4GOSTR-ND      		ON SemiconductorIGBT 9A 600V DPAK
      RoHS: Compliant
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
        NGTB03N60R2DT4G
        DISTI # 33368659        		ON SemiconductorTrans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
        RoHS: Compliant        		40000
        • 2500:$0.3072
        NGTB03N60R2DT4G
        DISTI # 25775914        		ON SemiconductorTrans IGBT Chip N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R
        RoHS: Compliant        		2447
        • 20:$0.9454
        NGTB03N60R2DT4G
        DISTI # 45Y1414        		ON SemiconductorIGBT, SINGLE, 600V, 9A, TO-252-3,DC Collector Current:9A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:49W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
          NGTB03N60R2DT4G
          DISTI # 58Y3603          		ON SemiconductorIGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 RoHS Compliant: Yes0
            NGTB03N60R2DT4G
            DISTI # 863-NGTB03N60R2DT4G            		ON SemiconductorIGBT Transistors RC2 IGBT 3A 600V DPAK
            RoHS: Compliant            		2350
            • 1:$0.8700
            • 10:$0.7170
            • 100:$0.4630
            • 1000:$0.3710
            • 2500:$0.3130
            • 10000:$0.3010
            • 25000:$0.2900
            NGTB03N60R2DT4G
            DISTI # 8829795P            		ON SemiconductorIGBT N-CH 600V 4.5A DPAK3, RL1860
            • 50:£0.2190
            NGTB03N60R2DT4G
            DISTI # 2492864            		ON SemiconductorIGBT, SINGLE, 600V, 9A, TO-252-3
            RoHS: Compliant            		398
            • 500:£0.2160
            • 250:£0.2370
            • 100:£0.2570
            • 25:£0.2770
            • 5:£0.3070
            NGTB03N60R2DT4G
            DISTI # XSKDRABS0014329            		ON SEMICONDUCTOR 
            RoHS: Compliant            		57500 in Stock0 on Order
            • 57500:$0.2827
            • 2500:$0.3029
            NGTB03N60R2DT4GON Semiconductor600V,4.5A,N-Channel IGBT1950
            • 1:$0.6600
            • 100:$0.4900
            • 500:$0.4200
            • 1000:$0.4000
            NGTB03N60R2DT4G
            DISTI # 2492864            		ON SemiconductorIGBT, SINGLE, 600V, 9A, TO-252-3
            RoHS: Compliant            		398
            • 10000:$0.4540
            • 2500:$0.4720
            • 1000:$0.5590
            • 100:$0.6980
            • 10:$1.0800
            • 1:$1.3100
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            可用性
            库存:
            Available
            订购:
            1985
            输入数量:
            NGTB03N60R2DT4G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$0.87
            US$0.87
            10
            US$0.72
            US$7.17
            100
            US$0.46
            US$46.30
            1000
            US$0.37
            US$371.00
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