IPB80N06S2-08

IPB80N06S2-08
Mfr. #:
IPB80N06S2-08
制造商:
INF
描述:
Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
生命周期:
制造商新产品。
数据表:
IPB80N06S2-08 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
中频
产品分类
FET - 单
系列
优化MOS
打包
卷轴
部分别名
IPB80N06S208ATMA1 IPB80N06S208ATMA2 SP001067884
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
215 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
14 ns
上升时间
15 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
80 A
Vds-漏-源-击穿电压
55 V
Rds-On-Drain-Source-Resistance
7.7 mOhms
晶体管极性
N通道
典型关断延迟时间
32 ns
典型开启延迟时间
14 ns
通道模式
增强
Tags
IPB80N06S2-0, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB80N06S208ATMA1
DISTI # IPB80N06S208ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB80N06S208ATMA2
    DISTI # IPB80N06S208ATMA2-ND
    Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$0.9811
    IPB80N06S208ATMA2
    DISTI # IPB80N06S208ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S208ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$0.8859
    • 2000:$0.8539
    • 4000:$0.8229
    • 6000:$0.7949
    • 10000:$0.7809
    IPB80N06S208ATMA2
    DISTI # SP001067884
    Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001067884)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€1.0439
    • 2000:€0.8699
    • 4000:€0.8029
    • 6000:€0.7449
    • 10000:€0.6959
    IPB80N06S208ATMA2
    DISTI # 726-IPB80N06S208ATMA
    Infineon Technologies AGMOSFET N-CHANNEL_55/60V1000
    • 1:$1.8100
    • 10:$1.5400
    • 100:$1.2400
    • 500:$1.0800
    • 1000:$0.8920
    • 2000:$0.8310
    • 5000:$0.8000
    • 10000:$0.7690
    IPB80N06S2-08
    DISTI # 726-IPB80N06S208
    Infineon Technologies AGMOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
    RoHS: Compliant
    0
      IPB80N06S208ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Not Compliant
      978
      • 1000:$0.8300
      • 500:$0.8700
      • 100:$0.9100
      • 25:$0.9500
      • 1:$1.0200
      IPB80N06S208ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      5000
      • 1000:$0.7800
      • 500:$0.8200
      • 100:$0.8500
      • 25:$0.8900
      • 1:$0.9600
      IPB80N06S2-08Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 80A I(D), 55V, 0.0077OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB97
      • 51:$1.1250
      • 14:$1.5000
      • 1:$2.2500
      图片 型号 描述
      IPB80N04S2H4ATMA2

      Mfr.#: IPB80N04S2H4ATMA2

      OMO.#: OMO-IPB80N04S2H4ATMA2

      MOSFET N-CHANNEL_30/40V
      IPB80N04S4L04ATMA1

      Mfr.#: IPB80N04S4L04ATMA1

      OMO.#: OMO-IPB80N04S4L04ATMA1

      MOSFET N-CHANNEL_30/40V
      IPB80N06S3-07

      Mfr.#: IPB80N06S3-07

      OMO.#: OMO-IPB80N06S3-07

      MOSFET N-Ch 55V 80A D2PAK-2
      IPB80N06S2L-H5

      Mfr.#: IPB80N06S2L-H5

      OMO.#: OMO-IPB80N06S2L-H5

      MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
      IPB80N06S2L09ATMA1

      Mfr.#: IPB80N06S2L09ATMA1

      OMO.#: OMO-IPB80N06S2L09ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      IPB80N06S2L11ATMA1

      Mfr.#: IPB80N06S2L11ATMA1

      OMO.#: OMO-IPB80N06S2L11ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 80A TO263-3
      IPB80N03S4L-03(1)

      Mfr.#: IPB80N03S4L-03(1)

      OMO.#: OMO-IPB80N03S4L-03-1--1190

      全新原装
      IPB80N06S205XT

      Mfr.#: IPB80N06S205XT

      OMO.#: OMO-IPB80N06S205XT-1190

      全新原装
      IPB80N06S2L-05

      Mfr.#: IPB80N06S2L-05

      OMO.#: OMO-IPB80N06S2L-05-1190

      MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
      IPB80N06S2L06

      Mfr.#: IPB80N06S2L06

      OMO.#: OMO-IPB80N06S2L06-1190

      N-CH 55V 80A 6mOhm TO263-3
      可用性
      库存:
      Available
      订购:
      2000
      输入数量:
      IPB80N06S2-08的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.69
      US$1.69
      10
      US$1.60
      US$16.03
      100
      US$1.52
      US$151.88
      500
      US$1.43
      US$717.20
      1000
      US$1.35
      US$1 350.00
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