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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SPD13N05L | Infineon Technologies AG | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 1321 |
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: SPD1305NL OMO.#: OMO-SPD1305NL-1190 |
Infineon OptlMOS™ N-Channel Power MOSFET SPD15N06S2L-64 - TO252-3-11 |
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Mfr.#: SPD1306 OMO.#: OMO-SPD1306-1190 |
全新原装 |
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Mfr.#: SPD13302-1000M OMO.#: OMO-SPD13302-1000M-1190 |
全新原装 |
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Mfr.#: SPD1338-100M OMO.#: OMO-SPD1338-100M-1190 |
全新原装 |
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Mfr.#: SPD1367-0R56MH OMO.#: OMO-SPD1367-0R56MH-1190 |
全新原装 |
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Mfr.#: SPD1367-4R7M OMO.#: OMO-SPD1367-4R7M-1190 |
全新原装 |
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Mfr.#: SPD13N05+L OMO.#: OMO-SPD13N05-L-1190 |
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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|
Mfr.#: SPD13N05L OMO.#: OMO-SPD13N05L-1190 |
Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |